氮化銦磊晶薄膜之特性分析

Characteristic of InN Epitaxial Films

林瑋婷(Woei-Tyng Lin)

指導教授 ： 賴芳儀

元智大學/電機通訊學院/光電工程研究所/碩士(2009年)

摘要

在本論文中，我們使用化學束磊晶系統將異質結構之氮化銦薄膜成長在氧化鋅緩衝層上，並研究在不同之三五族流量比條件下成長之氮化銦薄膜的特性。氧化鋅緩衝層是預先使用磁控式濺鍍技術沉積在藍寶石基板上。從X光繞射訊號可知氮化銦薄膜擁有良好結晶度及其晶向高度朝c軸方向成長。氮化銦薄膜之電性與光性分別是使用霍爾及變溫光激螢光量測之，並由此得知其電性與光性會隨著三五族流量比增加而獲得改善。當三五族流量比增加時，載子濃度和發光能量分別從2.54×10^20位移至7.80×10^19 cm^3 以及0.78至0.74 eV。從光激螢光之結果發現其發光峰值較之前所研究的能隙來的高，此是因為Moss-Burstein效應所致，並在低溫時可觀察到氮化銦薄膜侷限化的現象。綜合以上，我們確認氧化鋅薄膜確實可成為氮化銦成長在藍寶石基板上之合適的緩衝層材料。

關鍵字

化學束磊晶、氮化銦、氧化鋅緩衝層

並列摘要

In this paper, we report the studies on the hetero-epitaxial growth of wurtzite indium nitride (InN) thin films on ZnO buffer layer by plasma assisted chemical beam epitaxy (CBE) system at different III/V ratios. ZnO buffer layer was pre-sputtered on sapphire using RF magnetron sputtering technique. X-ray diffraction (XRD) measurement showed that the InN films have good crystallinity and are highly oriented in the c-axis direction. The electronics and optical properties of InN films, which investigated by Hall measurement and temperature-depended photoluminescence (PL), were improved with increasing III/V ratio. The carrier concentration and emission energy value shifted from 2.54×10^20 to 7.80×10^19 cm^3 and 0.78 to 0.74 eV respectively while the III/V ratio increasing. The PL spectra results reveal that the peak energy values of InN films are higher than pre-reported value caused by Moss-Burstein effect, and the localization of InN films were showed at low temperature. According to these results, the ZnO thin film could be a suitable buffer layer for the growth of InN on sapphire wafer.

並列關鍵字

CBE, InN, ZnO buffer layer

參考文獻

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