金屬矽化物與矽異質結構奈米線陣列之製備與性質研究

The Fabrication and Properties of Heterostructured Metal Silicide/Si Nanowire Arrays

劉淳亦(Chun-Yi Liu)

指導教授 ： 陳力俊 ； 蔡哲正

國立清華大學/工學院/材料科學工程學系/博士(2011年)

摘要

Ordered and heterostructured NiSi2/Si nanowire arrays have been successfully fabricated by reacting nickel thin films on silica-coated ordered Si NW arrays. The coating of thin silica shell on Si NW arrays has the effects of limiting the diffusion of nickel during silicidation process to achieve the single crystalline NiSi2 NWs and maintain the straightness of the nanowire. The work function of Si NWs with NiSi2 tip (4.88 eV) was lower than the original Si NW arrays (5.01 eV). Excellent field emission properties were found for NiSi2/Si NW arrays. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the heterostructured NiSi2/Si field emitters. The characteristic of the Schottky junction were also verified by the I-V measurement. The weak ferromagnetic properties were also determined by the SQUIDs.
The heterostructured CoSi2/Si and PtSi/Si NW arrays have been also fabricated by silicidation of Si NW with a Co and Pt film, respectively. The CoSi2 is of platelet shape and forms endotaxial structure in Si NWs. The results indicate that the thin SiOx coated on Si NW arrays will be effective to obstruct the diffusion of the Co atoms and form platelet-shaped CoSi2.

關鍵字

金屬矽化物 ； 異質結構

並列摘要

無資料

並列關鍵字

Metal Silicide ； heterostructure

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