磁阻元件設計與磁性效應分析-以AMR為例

本篇論文主要是藉由設計不同長寬比的磁阻，實際量測方式觀察MR比和各R-H曲線的差異，以及搭配磁阻數值模擬軟體來探討鎳鐵條狀薄膜內部的磁區結構以及翻轉過程。磁阻從線寬6到18微米，線長200到600微米，以及磁阻形狀的改變所造成的影響，並且使用AMR製程技術，以材料Ni80Fe20的比例，薄膜厚度300埃來設計一系列元件。相較於傳統文獻裡MR比從原本2%，可提高至2.5%，前後共改進40%，優點為改善線性區範圍，並加大磁場偵測範圍。然後以端點量測法進行磁阻量測，藉由磁阻曲線來探討磁區翻轉行為，實驗分析的結果發現，長度增加對阻值有明顯的提升，形成正比的關係，寬度增加對阻值則明顯的降低，形成反比的關係，形狀方面不管設計在兩端為矩形、三角形、橢圓形等等，對阻值影響並不大，而這些現象透過磁阻模擬分析與我們所量測到的磁阻曲線得到相互的印證。

關鍵字

異相性磁電阻；磁電阻元件；磁性材料；磁性模擬

並列摘要

This paper is mainly designed for different aspect ratios of the magnetoresistance. By actual observation of the measured MR ratio as well as the difference of the RH curve and by the numerical simulation software, we study the relationship between the magnetoresistance, the future status of nickel iron film, and the internal structure of the magnetic zone Flip process. Using the AMR process technology, a series of component Magnetoresistance is designed by width from 6 to 18 microns, length 200-600 μm, changing shapes of the two ends, and the ratio of the material Ni80Fe20 with film thickness of 300. Compared with conventional MR literature with only 2% changes from the original, the proposed design can raise to 2.5% changes (40% improvement) in the linear range. Thus, the detection range of the magnetic field is increased. By the point measurement method for magnetoresistance at both ends, magnetoresistance curves from the analysis of the experimental results shows that increasing the length will significantly improve the resistance (in proportion), but increasing the width will significantly reduce the resistance and form an inverse relationship independent of the shape of both ends in rectangle, triangle, ellipse…etc. These phenomena are also verified by the simulations that match the measured magnetoresistance curve.