- 學位論文
新穎穿隧接面氮化鋁鎵/氮化鎵發光高電子遷移率電晶體之研究
Study on Novel AlGaN/GaN Light Emitting High Electron Mobility Transistor with Tunneling Junction
延伸閱讀
- Chen, Y. T. (2019). 基板移除之氮化鋁鎵/氮化鎵高電子遷移率電晶體微波訊號研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU201902423
- 洪瑞宏（2013）。氮化鋁鎵/氮化鎵金氧半高電子遷移率場效電晶體之製作與特性研究〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2013.01403
- 姜彥丞（2015）。氮化鋁鎵/氮化鎵高電子遷移率場效電晶體之表面披覆層研究〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0412201512083942
- Ye, J. M. (2012). The Study of GaN-based Micro/Nano Cavity Light Emitting Devices [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2012.01007
- 張仁誠（2011）。The Study of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Field Effect Transistors〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2011.10921