- 學位論文
高密度電漿化學氣相沉積系統之相關製程參數對矽薄膜結晶性和摻雜特性的影響之研究
Study on Effects of Process Paramenters to Crystallinity and Doping Characteristics of Silicon Thin Film Deposited by High Density Plasma Chemical Vapor Deposition (HDPCVD)
摘要
本篇論文在於利用高密度電漿化學沉積系統來進行沉積多晶或微晶矽薄膜，並且探討在不同製程參數下，對於矽薄膜的結晶性和摻雜特性的影響，本論文所探討的參數有氫氣稀釋比、電漿源的瓦數、製程壓力、基板溫度、基板偏壓、摻雜氣體的流量，並藉由XRD、SEM、Hall Measurement等儀器進行分析。 其中氫氣稀釋比對於結晶性的結果是有別於一般的文獻，在我們的實驗中，發現氫氣稀釋比在99%呈現出非晶矽，低於98%甚至更低可發現愈呈現多晶矽的結構。甚至於發現摻雜氣體的濃度對於結晶或摻雜濃度皆有相當程度的影響，本實驗中在摻雜氣體流量0.2sccm時，薄膜會有顯著的摻雜，且在0.2sccm時可才會有結晶矽的出現。 本論文亦著手在N型及P型的矽薄膜摻雜，與一般文獻研究上雷同之處，N型摻雜比P型容易多，至於製程參數上的影響發現在除了氣體摻雜濃度有顯著的決定性之外，電漿大小亦有相當程度影響，P型在電漿源瓦數1000W、可以達到9 x 1018cm-3，在900W時僅有5.3x1015cm-3，N型可以在900W甚至更低即可達到3 x 1020cm-3，不過先決條件是在氣體摻雜流量不能過高的情況下。
並列摘要
In this research work, we use high density plasma chemical vapor deposition system to fabricate uc-Si/poly-Si films, and study the crystallinity and doping characteristics affected by adjustable process parameters, hydrogen dilution ratio, RF power, process pressure, substrate temperature, substrate biasing, doping gas flow rate, and finally analyze by XRD, SEM, Hall Measurement etc. In our research, we find the anomalous effect by hydrogen dilution ratio different from amount references, here we got the amorphous Si at dilution ratio at 99%, and poly-Si at lower dilution ratio, the lower hydrogen dilution ratio will result better crystallinity. Also we discover the doping gas flow rate will affect no matter the crystallinity or doping concentration. In our experiment, we got remarkable doping concentration at lower gas doping flow rate, 0.2sccm, and the crystallinity is only observed at this flow rate. We also focus on getting better doping concentration for N-type and P-type. As other references, n-type doping is easier than p-type. In our experiment, we got doping concentration 9 x 1018cm-3 at RF power 1000W，5.3x1015cm-3 at 900W for p-type；and 3 x 1020cm-3 at even lower than 900W for n-type, but in order to get higher doping concentration, lower doping gas flow rate is necessary.
參考文獻
延伸閱讀
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