- 學位論文
25伏特上橋N型通道橫向擴散金氧半場效電晶體元件之特性研究
Study on 25 V High-Side N-Channel Laterally Diffused Metal Oxide Semiconductor Field Effect Transistors
延伸閱讀
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- Yu, M. H. (2013). 具有源極汲極應變矽鍺與嵌入式矽鍺通道之28奈米和下世代P型金氧半場效電晶體特性之研究 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2013.00268
- Tripathi, P. (2022). 實現於0.25 μm氮化鎵高電子遷移率電晶體製程的5GHz改進隔離度開關與實現於90 nm金屬-氧化物半導體製程的V波段低雜訊放大器的研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU202202090
- 吳建瑩（2009）。Study of High Speed and Low Voltage InAs-Channel Quantum Well Field Effect Transistors for RF and Logic Applications〔碩士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2009.00579
- 羅國軒（2010）。The Design of Laterally Diffused Metal Oxide Semiconductor Field Effect Transistor with Dielectric Modulation〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-0211201015593090