0.35um製程之橫向金氧半場效電晶體特性分析

The Characteristic Analyses of 0.35um Process LDMOSFETs

薛婉君(Wan-Jyun Syue)

指導教授 ： 龔正

國立清華大學/電機資訊學院/電子工程研究所/碩士(2007年)

摘要

此篇論文是以0.35um製程之橫向金氧半場效電晶體為主體，分成量測與模擬兩個部分的特性來探討分析，ㄧ是使用HP4156及Keithley 236量測元件的Id-Vd、Id-Vg曲線來分析導通電阻的組成及DIBL特性參數的萃取，另ㄧ方面是以台積電目前已生產0.35um製程的高壓元件，使用Tsuprem4及Medici模擬軟體進行部份結構調整，期許能達到更佳的效果。

關鍵字

串聯電阻 ； 汲極導致能障下降 ； 橫向式金氧半場效電晶體

並列摘要

In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring the Id-Vd and Id-Vg curves with HP4156 and Keithley 236 systems in order to analyze the components’ electrical properties such as on-resistance and breakdown voltage as well as to extract characteristic parameter of DIBL. On the other hand, TCAD tools like Tsuprem4[1] and Medici [2]are used to modulate some portion of the device structure with a well-built 0.35um high voltage process technology to optimize the device performance. Satisfactory results are obtained.

並列關鍵字

on-resistance ； DIBL ； LDMOSFETs

參考文獻

[1] AVANT! TSUPREM-4, Two-Dimensional Process Simulation Program,Version-2000.4.0

[2] AVANT! MEDICI, Two-Dimensional Device Simulation Program, Version-2000.4.0

[3] Ayhan A. Mutlu, Mahmud Rahman, “Two-Dimensional Analytical Model for Drain Induced Barrier Lowering (DIBL) in Short Channel MOSFETs,” in Proc. IEEE Southeastcon, pp. 340-344, 2000.

[4] J. D. Kendall, A. R. Boothroyd, “A two-Dimensional Analytical Threshold Voltage Model for MOSFETs with Arbitrarily Doped Substrates,” IEEE Trans. Electron Devices, vol.EDL-7, no.7, July 1986.

[5] R. Troutman, “VLSI Limitations from Drain-Induced Barrier Lowering,” IEEE Trans. Electron Devices, vol. ED-26, P.461, 1979.