矽鍺非對稱性量子井結構應用於電致吸收光電調變器

Asymmetric Ge/SiGe Quantum Well Applied for Optical Electro Absorption Modulator

李堃毓(Kun-Yu Lee)

指導教授 ： 李明昌

國立清華大學/電機資訊學院/光電工程研究所/碩士(2011年)

https://doi.org/10.6843/NTHU.2011.00086

摘要

在光通訊中，利用量子史塔克效應所製成的電致吸收光電調變器是十分重要的元件。另一方面，鍺與矽同是四族元素，擁有良好的批配，因此利用矽鍺做成的元件可以與以矽為基材的電子元件結合，能進一步地提升電子元件之間的傳輸效能。

在本篇論文裡，我們分析討論了波函數的分佈和對光子的吸收受非對稱量子井結構的影響及結果。並從中發現，當導帶和價帶的波函數侷限在不同位置時會有藍位移的現象產生。為此，我們提出了一個設計準則，使得元件擁有大幅度的藍位移。最後，我們依循該準則並利用模擬來驗証。

關鍵字

非對稱性量子井 ； 電致吸收光電調變器 ； 矽鍺

並列摘要

Optical electroabsorption modulators using quantum confinement Stark effect are important devices in optical commincation. Ge is group IV element that is compatible with Si process. It is possible to integrate Ge/SiGe quantum well devices with integrated circuite.

In this thesis, we study the eigen state of carrier and analyze the electroabsorption in an asymmetric quantum well. We find out that if the barrier height of carriers in conduction band and valance band are different, there exists blue shift when electric field is applied. We further suggest a design rule for engineering the blue shift, and with this rule, we demonstrate an example of elctroabsorption modulators with Ge/SiGe asymmetric quantum well.

並列關鍵字

asymmetric quantum well ； optical electroabsorption modulator ； SiGe

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