0.35和0.25微米BCD製程之橫向式蕭特基二極體元件設計

The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process

黃建豪(Chien-Hao Huang)

指導教授 ： 龔正 ； 黃智方

國立清華大學/電機資訊學院/電子工程研究所/碩士(2009年)

摘要

本篇論文針對蕭特基二極體以0.35um和0.25um BCD製成設計做討論。我們使用了2D模擬軟體去分析其元件特性，以提升蕭特基二極體的崩潰電壓，及改善導通電阻與漏電流之間的取捨為目標。除了2D模擬軟體提供我們由元件的橫截面上設計蕭特基二體外，3D軟體使我們可以更有彈性的由元件俯視面上做不同光罩的設計。最後，實驗量測結果將可以確認我們的模擬分析是否正確。

關鍵字

蕭特基 ； 二極體

並列摘要

In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work.

並列關鍵字

Schottky ； diode ； BCD

參考文獻

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