多數有機材料皆以熱蒸鍍方式去製作有機場效電晶體,為了能夠簡化製程降低成本及實現可撓性軟性電子的應用,有機材料若透過低溫溶劑塗佈方式將使未來更有發展性。本論文中,利用旋轉塗佈製程技術,成功的實現低成本且可撓性電晶體。不僅製作單載子傳輸之N型電晶體於軟性基板上,透過電性量測及物性分析加以討論;另外還有透過不同比例濃度混合N型及P型有機半導體材料於溶劑中,以旋塗式製作有機雙極性薄膜電晶體,並且針對其現象做一連串探討研究。 有機電子元件應用於邏輯電路上,我們透過串接N型及P型有機薄膜電晶體來實現低功率消耗的互補性電晶體電路。另外為了有效率整合有機積體電路,透過單層有機薄膜即能夠同時擁有電子傳輸及電洞傳輸,以此來完成互補性反相器電路的操作,在這同時一樣是利用低溫溶劑製程方式。在本文中有機雙載子注入電晶體是透過混合適當的Poly(3-hexylthiophene) 以及 fullerene來達到平衡的雙載子傳輸的特性。本文最後亦有相關的延伸,透過使用高介電常數的氧化物當介電層,來完成低電壓驅動的電晶體及其邏輯電路。
A large number of organic materials have to be deposited by thermal evaporation for the fabrication of organic field-effect transistors. In order to realize the low-cost and flexible electronic with various thin-film transistor application, the organic materials need to be deposited by solution processing for the fabrication of polymer field-effect transistors. In this thesis, the low cost and flexible device of field-effect transistors have been fabricated by spin coating. We not only fabricate and investigate the unipolar transport of the organic field-effect transistor on flexible substrates using solution processing, but also fabricate and investigate the bipolar transport of the organic field-effect transistor using solution processing by blending two organic materials. For the logic circuit application, we have demonstrated the complementary transistor circuits which comprised p-type and n-type transistor and utilized low-power consumption. Also, for the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. Ambipolar field-effect transistor devices were fabricated through solution processing, mixtures of p-type and n-type semiconductors Poly (3-hexylthiophene) and fullerene providing balanced ambipolar characteristics with high hole and electron mobilities. Finally, we also implemented the low-voltage operation inverter though using the high-k metal oxides as gate insulators.