- 學位論文
以選擇性雷射直寫形成類奈米碳管應用於奈米連線
Selective Formation of Carbon Nanotube-like Structures by Laser Direct Writing for Nano-interconnect Application
摘要
本研究欲以雷射直寫方式，形成高密度且具導電性的類奈米碳管(CNT-like)結構應用於奈米連線，主要透過改變沉積非晶碳膜(a-C)所用之碳源氣體(C2H2、CH4)與氫氣之流量比，得到不同特性之a-C，並探討其對以雷射直寫成長CNT-like結構之影響。此外，欲驗證以此技術輔以圖形化定義催化劑，來選擇性成長CNT-like結構，形成以a-C為絕緣層及CNT-like結構為導電層之奈米連線的可行性。 本研究以波長為248 nm之氟化氪準分子脈衝雷射 (KrF excimer laser)為雷射源，並以10 s、1 Hz之條件照射在先後鍍有10 nm Ti、10 nm Ni及30 nm a-C的基座上，結果發現，將雷射能量密度由46 mJ/cm2逐降至36 mJ/cm2之方式，可形成較密之導電CNT-like結構。藉由上述雷射照射方式，針對a-C鍍膜條件之影響作探討，發現以C2H2為碳源氣體所鍍出來的a-C，較有利於以雷射直寫方式成長CNT-like結構，此外，提升C2H2/H2流量比，有助於提高雷射照射後，形成的CNT-like結構之品質和其與基座的附著度。 此外，本研究亦使用有圖形化Ni/Ti催化劑於SiO2/Si上且鍍上a-C之基座，施以雷射照射，以驗證依催化劑的有無來進行選擇性CNT-like結構成長之可行性，於未來應用在形成以a-C為絕緣層和以CNT-like為導電層所構成之奈米連線。
並列摘要
This research is to form high-density, high-conductivity carbon nanotube-like (CNT-like) structures for nano-interconnect application. The effect of amorphous carbon (a-C) characteristics on CNT-like formation was investigated by using C2H2 or CH4 as a reaction gas for a-C deposition with various C2H2/H2 and CH4/H2 ratios. Besides, the feasibility of selective CNT-like structures formation from the a-C film with patterned catalysts underneath was studied so as to form the nano-interconnect composed of insulating a-C and conducting CNT-like structures. In this research, 248 nm KrF excimer laser light was exposed on the substrates with a-C(30 nm)/Ni(10 nm)/Ti(10 nm) on top for 10 s at 1 Hz to form CNT-like structures. Higher quality of CNT-like structures is achieved at laser energy density ramped from 46 mJ/cm2 to 36 mJ/cm2 gradually. The effect of a-C characteristics on the formation of CNT-like structures was investigated at laser condition as above. It was found that C2H2-deposited a-C films were more suitable for formation of CNT-like structures. Increasing the C2H2/H2 ratio can also improve the quality and adhesion of CNT-like structures on substrates. The a-C films with patterned Ni/Ti catalyst underneath were deposited on SiO2/Si to verify the feasibility of forming CNT-like structures selectively by laser direct writing for the formation of nano-interconnect consisting of insulating a-C and conducting CNT-like structures.
參考文獻
延伸閱讀
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