600V垂直型超接面閘流體過壓保護元件的設計

傳統的閘流體過壓保護元件 (TSPDs, Thyristor Surge Protective Devices) 在高壓應用時，必須降漂移區的摻雜濃度與提升厚度，相對的也增加導通電阻 (Ron)，因此限制了閘流體過壓保護元件額定電流的大小。近年來，一種新的耐壓結構結構被發明並製作出來，這種結構稱為超接面 (Super-junction) 結構，他的主要特色為耐壓程度不會受摻雜濃的影響，因此，在提供高抗壓的同時，此種結構仍然擁有很高的摻雜濃度，因此其導通電阻比一般功率元件低很多。雖然有很多研究成功的將這種結構與功率金氧半電晶體 (Power MOS) 與絕緣閘雙極性電晶體 (IGBT) 結合且得到很好的效果，但很少有研究在探索這種結構應用在閘流體 (Thyristor)上的成果。在此篇論文中，我們嘗試將超接面 (Super-junction) 結構與傳統的閘流體過壓保護元件結合，並設計一個額定電壓為600V的超接面閘流體過壓保護元件 (Super-junction TSPD)。雖然特性改善並沒有預期中來的好，但其特性與和傳統過壓保護閘流體的比較仍會在本論文中完整的呈現出來。

關鍵字

突波保護；超接面；閘流體

並列摘要

Conventional TSPDs (Thyristor Surge Protective Devices) have to reduce the doping of the drift region or increase its thickness for high voltage application. It causes the on resistance (Ron) rises rapidly and limits the rating current of the TSPD in high voltage application. In recent years, an innovative structure, called the super-junction was invented. The outstanding feature of this structure is that the structure maintains a high doping concentration at high voltage ratings. Therefore, the on resistance of this structure is much smaller than that of the conventional drift region. Although there are many researches successful combining the super-junction with power MOS and IGBT, rarely researches to discuss the result when the super-junction embedded in the Thyristor. In this thesis, we are trying to combine the super-junction with the thyristor, and designing a 600V super-junction TSPD. Though the performance of this device is not as good as expected, the characteristics and the comparison with the conventional TSPD are still presented in this thesis.

並列關鍵字

surge protector ； super-junction ； thyristor

參考文獻

[12] 林澤義、馮政寧，氧化鋅變阻器突波吸收能力研究，中原學報，第26卷第

charge imbalance on the static and dynamic characteristics of the super junction

[2] AVANT! TSUPREM-4, Two-Dimensional Process Simulation Program,

[3] AVANT! MEDICI, Two-Dimensional Device Simulation Program,

Limited, 2000.

國際替代計量

600V垂直型超接面閘流體過壓保護元件的設計

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