單根奈米碳管變溫下之電性量測

Electrical Measurement of a Single Carbon Nanotube under Various Temperatures

陳思伯(Szu-Po Chen)

指導教授 ： 呂助增

國立清華大學/理學院/物理學系/碩士(2006年)

摘要

本實驗利用半導體製程中，光學微影術之圖像轉移的方式，製作成長奈米碳管所需的電極樣品，再將樣品放入本實驗室自製之微波電漿化學氣相沉積系統之中成長奈米碳管，並在低溫下量測跨越電極的單根多壁奈米碳管樣品。
我們選擇了兩種樣品做量測，對於結構完整的碳管，其在室溫下的電壓電流曲線會有階梯的變化出現，利用單電子電晶體的庫倫阻抗的效應，分析則以一個簡單的幾何模型，可以適當解釋此階梯的現象。除此之外，在量測另一個雜質較多的單根奈米碳管後，其電壓電流曲線在室溫下為歐姆曲線，但是在低溫下，會呈現非線性的現象，經由分析其電阻溫度曲線，可發現其呈現負電阻溫度係數，實驗結果將以強侷限理論做合理的解釋。

關鍵字

奈米碳管 ； 庫倫阻抗理論 ； 電子電晶體 ； 強侷限理論 ； 圖像轉移技術 ； 電性量測

並列摘要

We have measured a single multiwalled carbon nanotube grown on cross-structured electrodes constructed by catalyst nickel film deposited on SiO¬2/Si substrate by a method of microwave plasma enhanced chemical vapor deposition (MPECVD). The step in current-voltage characteristic measured at room temperature inherited to the single electron blockades is detected. A simple geometry model suggesting that the nanotube is loosely suspended between the electrodes can successfully portrait the steplike behavior.
Temperature-dependent resistivity measurements were carried out at various temperatures for other samples solidly grown nanotube on electrodes. The R-T curves are nonlinear which are consistent with a one dimensional localized system characterized with the exponential behavior. A strong localization analysis will be shown.

並列關鍵字

carbon nanotubes ； coulomb blockade theory ； single electron transistor ； strong localization ； pattern transfer technologies ； electrical measurement

參考文獻

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