鈦介層對於氮氧化鈦薄膜之相轉變與其相關性質的影響

The influence of Ti interlayer on the phase transition and related properties of Ti(N,O) thin films

廖鴻仁(Hong-Ren Liao)

指導教授 ： 黃嘉宏 ； 喻冀平

國立清華大學/原子科學院/工程與系統科學系/碩士(2008年)

https://doi.org/10.6843/NTHU.2008.00165

摘要

在非平衡磁控濺射鍍膜系統中，氮氧化鈦薄膜成功的鍍著於鈦介層上。本實驗主要在探討鈦介層對於氮氧化鈦薄膜的結構與相關性質之影響。鈦介層的厚度透過二次離子質譜儀與掃瞄式電子顯微鏡的分析結果而推定。在氮氧化鈦薄膜與純鈦介層間可以觀察到一個介面擴散區，且氮原子與氧原子會自上層薄膜中擴散進入並與鈦介層發生反應。 透過X-ray繞射分析結果，可以發現在0與0.25 sccm的氧通量時主結構相為氮化鈦，而在0.75與1.5 sccm的氧通量中轉為Ti3O5；並且在1.5 sccm的氧通量中，膜的上層可以發現TiO2。當膜的主結構相由氮化鈦轉為Ti3O5時，硬度出現明顯的下降，殘留應力也有減少現象，而膜的電阻率則是大幅度的上升。隨著膜厚的增加，鈦介層汲取氧原子的相對距離也隨著增多，吸收氧原子的效果也隨著越遠離鈦介層而變差，因此可以在氧通量0.75與1.5 sccm的最厚試片中發現膜的上層有TiO2的存在。概要而言，鈦介層吸收了氮氧化鈦薄膜中的氧原子與氮原子並產生反應，進而造成氮氧化鈦薄膜的相轉換並影響其相關的性質。

關鍵字

氮氧化鈦 ； 介層

並列摘要

The Ti(N,O)/Ti thin films has been successfully deposited by unbalanced magnetron sputtering (UBMS) system. The purpose of this thesis was to study the influence of Ti interlayer on the structure and related properties of the Ti(N,O) thin film. Secondary ion mass spectroscopy (SIMS) and scanning electron microscopy (SEM) were used to determine the thickness of the Ti interlayer. An interdiffusion zone was found to form between the Ti(N,O) film and the pure-Ti interlayer, where oxygen and nitrogen atoms diffused from the film and reacted with the Ti interlayer. As a result, instead of TiO2, a oxygen deficient Ti3O5 was formed in the Ti(N,O) film at 0.75 and 1.5 sccm O2, and thereby affecting the related film properties. The X-ray diffraction (XRD) results showed that the major phase of the Ti(N,O) thin film was TiN at 0 and 0.25 sccm O2 and Ti3O5 at 0.75 and 1.5 sccm O2; TiO2 was observed in the upper layer of the film deposited at 1.5 sccm O2. The film hardness significantly decreased, residual stress moderately decreased and the electrical resistivity substantially increased as the dominant phase changed from TiN to Ti3O5. As the film thickness increased, the diffusion distance of the O atoms that absorbed by the Ti interlayer also increased, and therefore, TiO2 could form in the upper layer of the film deposited at the 0.75 and 1.5 sccm O2 for 6 hours. In summary, the effect of Ti interlayer was mainly from the absorption and reaction of O and N in the Ti(N,O) film, which significantly affected the phase transition and the related properties of the film.

並列關鍵字

Ti(N,O) ； interlayer

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