含預製鋯介層之奈米晶氮化鋯薄膜製程及性質之研究

Study of Deposition Process and Properties for ZrN on Si(100) Substrate with Pre-existed Zr Interlayer

黎禹辰(Yu-Chen Li)

指導教授 ： 黃嘉宏 ； 喻冀平

國立清華大學/原子科學院/工程與系統科學系/碩士(2007年)

https://doi.org/10.6843/NTHU.2007.00651

摘要

本論文目的在研究中空陰極放電離子鍍著系統中，預製鋯介層之厚度對於奈米晶氮化鋯薄膜的成分、結構與機械性質的影響。實驗結果顯示，在該系統中鍍著純鋯層時，很難防止氮的汙染，並且在加熱及鍍著過程中，二氧化鋯的形成更是無法避免。在成功鍍著出含鋯介層的試片中，鋯介層中的氧化反應深度最高達到158nm，這是因為形成二氧化鋯層後，該氧化層會妨礙外界的氧繼續擴散至介層內部造成氧化。在所有試片中，氮化鋯薄膜都呈現(111)的優選方向。隨著氮化鋯薄膜的厚度增加，其電阻率隨之降低。隨著介層的加入，薄膜的殘餘應力被釋放，但其硬度並未有顯著變化。因此殘餘應力的釋放對硬度的改變並無影響。

關鍵字

氮化鋯 ； 介層 ； 厚度

並列摘要

Nano-crystalline ZrN thin films were successfully deposited on p-type Si(100) substrates and pre-existed zirconium interlayer using the hollow cathode discharge ion plating (HCD-IP) system. The effects of interlayer thickness on the composition, structures and mechanical properties of the ZrN coatings were investigated. The results showed that it is extremely difficult to deposit a pure zirconium layer without the contamination of N, moreover, the formation of ZrO2 seems to be inevitable during heating and deposition process of ZrN film using the HCD-IP system. The reaction depth of oxidation in Zr interlayer was up to 158 nm because the formation of ZrO2 may hinder the diffusion of oxygen into Zr underlayer and thereby terminating the advancing of ZrO2/Zr interface. The preferred orientation (111) was dominant in ZrN films for all specimens. The resistivity decreased with increasing the thickness of ZrN layer of the film. With an interlayer introduced, the residual stress was released, but the hardness did not change significantly. Therefore the release of residual stress had no relationship with the hardness.

並列關鍵字

ZrN ； interlayer ； thickness