- 學位論文
拋光製程破片關鍵影響因子辨識模型
A model to identify and monitor key process factors for wafer breakage prevention in polishing processes
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摘要
在半導體製造中，晶圓拋光過程產生破片是一個非常嚴重的問題，不僅是晶圓的成本相當昂貴，也會因為需處理機台問題和重新設置失去很多時間，更不用說是影響對顧客交貨的信譽。拋光機台相關的參數很多，但真正和產生晶圓破片有關的往往是集中在幾個少數關鍵因子上。本研究的目在於建立一個模型以辨識機台發生前之關鍵參數變化，以判斷機台可能破片。此辨識模式可為將來機台及時監控之用，使機台在可能破片之前及時停機以做處理，可以大幅降低成本損失，提升機台製程良率。 本研究以馬氏田口和邏輯迴歸方法，建立拋光機台發生破片的關鍵影響因子，並且進行績效指標以敏感度、明確度、總正確性、以及ROC (Receiver Operating Characteristic)分析曲面下的面積來比較此兩法的優劣，結果顯示馬氏田口判斷力較邏輯迴歸為佳。利用馬氏田口建立一套判斷拋光製程狀態的破片判斷機制。
並列摘要
In semiconductor manufacturing, wafer breakage during polishing processes is a very serious problem. Not only the cost of wafers are very expensive, much valuable time are also lost due to problem handling and machine re-setups – not to mention delivery credibility with customers Though there are many parameters associated with the wafer polisher, it is expected only a smaller number of parameters has some relationship with wafer breakage. The goal of this research is to identify a small number of relevant parameters and/or build some index to monitoring wafer breakage potential before it actually happens so that the problem can be handled to reduce wafer breakages. This research used Mahalonobis-Taguchi System (MTS) and Logistic Regression (LR) methods to identify the key factors which are related to wafer breakage of Polisher Machine. Sensitivity, specificity, Accuracy and Area Under Curve(AUC) are used to as performance indices of the two methods. The result showed that MTS performed better than LR. The MTS indice was then chosen as a mechanism for monitoring wafer breakage potential of Polisher Machine.
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