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  • 學位論文

烷硫醇分子在矽(111)面上之自組裝特性研究

Formation and Characterization of Alkanethiol Self-Assembled Monolayers on Si (111) Surface

指導教授 : 蘇雲良 陳家浩

摘要


此篇論文探討藉由UV光催化硫烷類分子成長於氫化矽表面上之特性研究。實驗中選用1-十二硫醇(1-dodecanethiol,DDT)分子為研究基礎,進而成長良好的DDT/Si(111)薄膜。再透過水滴接觸角量測、高解析X光光電子能譜儀(HRXPS)、X光微結構吸收光譜(NEXAFS)、衰減式全反射紅外光吸收光譜技術的解析(ATR-FTIR),將對於DDT/Si(111)薄膜的表面濕潤特性、電子結構、分子排列、分子間偶極矩振動模式等,加以透徹分析與討論。 實驗結果顯示,成長DDT/Si(111)薄膜呈現疏水性的101度,藉由HRXPS偵測薄膜表面碳1s、硫2p、矽2p、氧1s電子結構訊號,均反應出DDT分子以S-Si鍵結為成長基礎,並在無氧化層的影響下良好成長於氫化矽基材表面上。另外,由NEXAFS和ATR-FTIR解析DDT分子碳鍵為有序結構排列且站立角約56度,進而推估薄膜層厚度約15Å。綜合以上多方面的數據,都逐一顯示該參數成長之下,可成功製備良好的DDT/Si(111)薄膜。 進一步探討DDT/Si(111)薄膜對於大氣環境的抵抗能力。從HRXPS分析矽2p與硫2p能譜顯示薄膜在大氣中存放一週後逐漸開始氧化,再利用KOH溶液清洗DDT/Si(111)薄膜,將驗證大氣使表面原有的破洞或殘缺、以及分子自然排列domain boundary之部分開始氧化。另一方面,又藉此分析氧含量的多寡,透過計算得到DDT覆蓋表面比例高達到約93%。總結以上各種的量測與試驗,確認成功的製備出以S-Si鍵結作為基礎成長的單分子層系統,對於能在乾淨除氧的矽基材上之應用更加推廣及發展。

並列摘要


In this thesis, we have studied the formation of 1-dodecanethiol (DDT) self-assembled monolayers (SAMs) grown on hydrogen-terminated Si(111) surfaces. The surface wettability, electronic properties, molecular orientation, and molecular oriented transition dipole moment of the DDT/Si(111) film were studied by water contact angle, high-resolution X-ray photoelectron spectroscopy (HRXPS), polarized near-edge X-ray absorption fine structure (NEXAFS), and attenuated total reflection fourier transform infrared(ATR-FTIR). The 101° water contact angle and HRXPS measurement indicate the DDT is almost fully covered on Si forming a high quality and densely peacked methyl-terminates surface. Furthermore, a combination of NEXAFS and ATR-FTIR measurements revealed a structure of ordered alkyl chains tilted 33.4° related to the surface normal and calculated film thickness of 15 Å. To investigate the durability of the monolayer, the fresh DDT/Si(111) samples were kept in atmospheric condition from one day up to a month. From Si 2p and S 2p spectra, a slight increase of the oxide component was observed after a week. Moreover, by immersing sample into potassium hydroxide solution, we concluded that the oxidation of DDT/Si(111) is starting from the defect sites and domain boundary of the SAMs.

參考文獻


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被引用紀錄


甘瑋甄(2017)。二氧化矽負載鈮氧化物的製備與優化應用於催化甘油縮醛反應之研究〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201700577

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