原子層化學氣相沉積HfO2高介電薄膜應用於電荷能陷儲存元件之特性研究及鑲嵌金奈米晶粒於元件特性之影響

Atomic Layer Deposition of HfO2 Thin Film as Charge Trapping Layer and the Effects of Au Nanocrystals Embedded for Nonvolatile Memory Application

蘇威憲(Wei-Hsien Su)

指導教授 ： 吳泰伯

國立清華大學/工學院/材料科學工程學系/碩士(2010年)

摘要

Non-volatile semiconductor memories have attracted much attention due to the fast growing demand of portable electronic devices. In this thesis, the atomic layer deposition prepared HfO2 thin film was fabricated with TEMAH as precursor and O2 plasma as oxidant. A 7-nm thick HfO2 thin film was applied as the charge trapping layer. The significant hysteresis loops found in C-V relation indicated the exellent charge storage effect. In additon, the erase and retention characteristics were investigated and the results were satisfactory for nonvolatile memory application.
Moreover, the Au nanocrystals were embedded in HfO2 at different locations. The effect on the device was investigated. It is found that the Au nanocrystals have an influence on the device characteristics due to the field enhancement effect.

關鍵字

原子層氣相成績 ； 電荷能陷儲存元件

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