氧化鉿薄膜之電阻式記憶體轉態特性探討與研究

The Study on HfO2 Resistive Random Access Memory

高公鍇(Kung-Kai Kao)

指導教授 ： 葉鳳生 ； 張鼎張

國立清華大學/電機資訊學院/電子工程研究所/碩士(2010年)

https://doi.org/10.6843/NTHU.2010.00490

摘要

有鑑於非揮發性記憶體在可攜式產品中的重要地位以及目前所遇到的瓶頸,研發新世代的記憶體已經成為刻不容緩的目標.電阻式記憶體無論是在操作速度.功率消耗.面積大小.以及製程整合上都明顯優於其它記憶體,因此本研究著重於電阻式記憶體.在眾多電阻式記憶體材料中,我們選用二氧化鉿(HfO2)以及上電極Ti下電極TiN來做為我們的研究材料,其原因為二氧化鉿可以直接進行製程整合無虛額外的污染考量,上電極選用Ti是因為在CMOS邏輯閘製程的多層島連線中,Ti已經廣泛的被當作吸附層再使用,而下電極選用TiN的原因也是因為在多層島連線中,TiN也已經廣泛的被當作阻障層使用,所以可以減少製程整合上的問題.而在本研究中大致上可以分成氧化鉿RRAM的基本特性探討以及單一原件多重位元儲存的可能性,並在最後找出可能的轉態時間與功率消耗.並且利用變溫的技巧成功萃取出不同電壓下的缺陷深度,以及不同限流下的導電行為.這對以後電阻式記憶體與邏輯閘結合上有重大的幫助.

關鍵字

電阻式記憶體

並列摘要

In recent year, non-volatile memory has become more and more important in our life. However, as the CMOS scaling goes on, we need faster, smaller, and less power consume’s memory to use in portable merchandises. Under this condition, resistive switching random access memory (RRAM) has strong potential among next generation non-volatile memory candidates. Hence, our study will focus on RRAM and its applications.Among so many RRAM materials, we decide using HfO2 to be our dielectric layer and Ti as top electrode TiN as bottom electrode. It is because HfO2 has been broadly used in COMS process and Ti, TiN also wieldy used in via as adhesion layer and stopping layer. So our material can directly compatible with CMOS process without any other contaminations issue.Our study can be divided to two parts: one is basic HfO2 RRAM characteristic the other is studying the possibility of HfO2 RRAM application in multi-level operations. Finally, by using changetemperature technique, we can abstract the defect levels , erase/programming times ,power consumptions and device operation behavior under different compliance current. Hoping our study will give other researchers help and contributions to RRAM.

並列關鍵字

RRAM

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