摻雜鈥元素之矽奈米線的製備及分析

Synthesis and Analysis of Holmium-doped Silicon Nanowires

陳昌信(Chang-Xin Chen)

指導教授 ： 陳力俊

國立清華大學/工學院/材料科學工程學系/碩士(2008年)

https://doi.org/10.6843/NTHU.2008.00480

摘要

The research focuses on the synthesis of holmium doped silicon nanowires. Large-area silicon nanowires on Au-coated silicon substrates were prepared with silicon and holmium chloride as sources. The formation mechanism of silicon nanowires could be explained by a vapor-liquid-solid (VLS) growth process with metal catalysts. Variation of the experimental parameters, such as pressure, temperature, carrier gas, and the ratio of silicon and holmium chloride sources led to the finding of the optimal growth conditions. The carrier gases were found to influence significantly the diameter of the silicon nanowires. The transmission electron microscope image shows a typical silicon nanowire with coaxial nanostructures with a silicon nanowire core inside and an outer amorphous oxide sheath. For field emission properties, the excellent turn-on field and β value of the nanowires were attributed to the high density of silicon nanowires. In the I-V measurements, consistent values of resistivity were obtained.

關鍵字

奈米線 ； 矽 ； 鈥

並列摘要

HASH(0x1c0b1070)

並列關鍵字

nanowires ； silicon ； holmium

參考文獻

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