嵌入式金屬-氮化矽-氧化層低溫複晶矽薄膜非揮發性記憶體在系統化面板上之應用

本論文提出如何利用堆疊式閘極介電層(金屬-氮化矽-氧化層)之結構，在系統化面板上實現製程相容之非揮發性記憶體。在資料儲存上，此內嵌式N通道金屬-氮化矽-氧化層單次寫入薄膜記憶體可應用在NOR陣列上，透過字元閘及位元端之分壓操作，可提供較高的寫入效率及干擾免疫特性。利用通道FN穿隧電子之寫入，能夠達到低功率輸出及較優異的資料保存特性。本元件對於低溫複晶矽製程而言，可作為一理想的單次寫入記憶體。針對有機發光二極體應用上，本論文提出在不改變傳統的低溫多晶矽驅動畫素電路下，利用新型的電流提升技術來調整P通道薄膜電晶體的臨界電壓值，以促進驅動電流之一致性，使得顯示面板上之亮度不均勻性能在產品測試期間達成修復，不需要任何外部的記憶體或是額外的補償電路。此項技術已成功的在2.4吋之有機發光二極體面板上驗證，達到顯著的修復效果。

關鍵字

製程相容；金屬-氮化矽-氧化層；低溫複晶矽；薄膜電晶體；單次寫入記憶體

並列摘要

In this study, a nonvolatile memory realized by fully-compatible LTPS process is investigated for various novel applications. For data storage, the embedded N-channel Metal-Nitride-Oxide-Silicon (MNOS) One-Time-Programmable (OTP) cell arranged in a NOR array architecture is demonstrated. Furthermore, fast program efficiency and high disturb immunity are obtained by divided voltages on wordline (WL) and bitline (BL). Through channel FN programming, superior data retention as well as low power operation are therefore achieved. The new embedded MNOS cell has provided a promising one-time-programming memory solution on the LTPS panels’ applications. For AMOLED (Active Matrix Organic Light-Emitting Displays), the proposed innovative current boosting scheme can adjust the threshold voltage level of a P-channel TFT in the OLED driver circuit. Thus, the uniformity of the driving current can be greatly improved without any change on the conventional 2-TFTs and 1-capacitor pixel circuit. The mura recovery of operation can be performed during product testing steps without any external memory modules or additional compensation circuits. This current boosting scheme has been successfully verified in a 2.4-inch AMOLED panel with significant uniformity enhancement.

並列關鍵字

Fully-compatible ； Metal-nitride-oxide (MNOS) ； Low-temperature polycrystalline-silicon (LTPS) ； Thin-film-transistor (TFT) ； One-time-programmable (OTP)

參考文獻

[1] Jung-Hoon Oh, Hoon-Ju Chung, Nae-In Lee, and Chul-Hi Han,”A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell,” IEEE Electron Device Lett.,vol.21.,NO.6.JUNE 2000,pp. 304.

[4] Y. Kuo “Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—A critical review,” Vacuum, vol. 51, Dec. 1998, pp. 741.

[5] T. Sameshima, S. Usui, and M. Sekiya “XeCl excimer laser annealing used in the fabrication of poly-Si TFT’s” IEEE Electron Device Letters., vol.EDL-7, No.5, 1986, pp. 276.

[6] A. V. Ferris-Prabhu, “Theory of MNOS memory device,” IBM J. Res. Dev, 1973, pp. 125.

[8] Y. C. Lin ', C. SI. Lail, S. S. Chung', Evans Yang', S. Pittikoud, S. -M. Tzeng3, and C. C. -H. Hsu, “A Highly Reliable NAND Structure Flash Memory Capable for Low Voltage Operation,” Proc. IEEE Int. Rel. Phys. Symp., Apr, 2005, pp. 666.

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嵌入式金屬-氮化矽-氧化層低溫複晶矽薄膜非揮發性記憶體在系統化面板上之應用

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