在碳化矽表面上成長石墨烯並藉由角解析光電子能譜量測能帶結構

Graphene growth on SiC surface and characterized by angle-resolved photoemission spectroscopy

蔣孟勳

指導教授 ： 崔古鼎

國立清華大學/原子科學院/先進光源科技學位學程/碩士(2012年)

https://doi.org/10.6843/NTHU.2012.00096

摘要

石墨烯是由碳原子以蜂巢狀排列而成的二維度材料。由於具備高載子遷移率、高晶格的品質和經濟的價值，石墨烯被認為是可運用在下一世代設備裡面的低尺度材料。在本論文中，我成功在3.5°傾角的6H碳化矽上成長出石墨烯，並利用角解析光電子能譜量測其電子結構。我們成功成長出單層、雙層及多層的石墨烯，而他們的電子能帶結構也能被TB模型良好的擬合。成長石墨烯最好的條件是在至少1400°C下加熱碳化矽基板。在我們的樣品上，因為溫度的不均勻加熱，使得不同厚度的石墨烯以小區域的分佈在表面。在未來會以長方形的基底來改善溫度梯度造成的影響。而在有傾角的碳化矽上長出的石墨烯，與先前在無傾角碳化矽上長出的石墨烯的研究，有相似的電子結構。但因為區域過小限制了解析度，因此不足以辨別是否有不同的電子結構。

關鍵字

石墨烯 ； 光電子能譜

並列摘要

Graphene consists of a single layer of carbon atoms packed in a 2D honeycomb structure. It is highly promising as a low-dimensional material for next generation devices owing to its high carrier mobility, high crystal quality and economic price. In this thesis, I grow graphene on 6H-SiC with 3.5° miscut and use the Angle-resolved photoemission spectroscopy (ARPES) to probe the electronic structure of materials. We have successfully grown SLG, BLG and few layer graphene and the band structure can be fitted well by a tight-binding model. The best condition to grow graphene is to heat substrates at 1400 °C more than one hour. In our samples, different thickness of graphene with small domains exists on the wafer due to non-uniform temperature distribution. A rectangular shape of SiC substrate will be used to reduce the temperature gradient problem in the future. The band structure of graphene grown on miscut SiC substrate is similar to previous studies on on-axis SiC in the literature. However, small ordered domain of graphene sample limits the resolution to distinguish the change of electronic structure between on-axis and miscut samples.

並列關鍵字

graphene ； ARPES

參考文獻

Chapter 1

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