在銅版紙上的五苯環有機電晶體製備

Fabrication of pentacene organic thin film transistors on art paper

張維宸

指導教授 ： 黃振昌

國立清華大學/工學院/材料科學工程學系/碩士(2012年)

https://doi.org/10.6843/NTHU.2012.00332

摘要

近年來，電子元件或電路設計製作在以紙做為基板的研究越來越多。紙不但是軟性基板，且具可回收、易分解且便宜等特性，使其優於高分子基板。本論文研究在紙基板上製作以蠶絲為閘極介電層的五苯環有機薄膜電機體之特性。紙張的種類為市售銅版紙，沒有再經過進一步的表面處理，也沒有鍍上任何的防水層。我們選用銅做為閘極的電極，把厚度提升到500nm，發現其可以填補紙張為了吸收油墨而設計的孔洞，降低紙張吸水特性。也藉由加厚閘極降低元件表面粗糙度，對於此想法我們也透過SEM與AFM分析來加以印證。我們也在製作蠶絲膜的過程中將烤乾溫度提高到100℃，因而在溶液被紙張吸收之前，將會早一步的蒸發，有效地保持在溶液製程中紙張表面的平整。
在各種蠶絲成膜法中，以噴槍成膜法最佳，可得高性質的元件，其載子移動率可達到12.2 cm2 V-1 S-1，臨界電壓 -0.55 V，次臨界擺幅 365 mV/decade，低操作電壓，其表現已經媲美在高分子基板上的元件。

關鍵字

銅版紙 ； 有機薄膜電晶體

並列摘要

Nowadays, many studies about fabricating electron devices and circuit design on paper substrate have increased. Paper is not only cheap but also recyclable that it becomes very potential which compared with polymer substrate. In our study, pentacene organic thin film transistors (OTFTs) were fabricated on art paper with silk fibroin as gate dielectric. Art paper was chosen as the substrate, which was obtained from bookshop without extra treatment before using. Surface roughness and water absorption are two primary drawbacks when art paper is utilized as the substrate for the fabrication of pentacene OTFTs with silk fibroin as the gate dielectric. The surface roughness of art paper can be compensated by depositing thick Cu gate electrodes (500 nm) onto the art paper. Moreover, the thick Cu gate electrodes can almost fill the microvoids of art paper but with nanoscale crack lines left over the surface. These would be explained by both the scanning electron microsopy (SEM) and Atomic Force Microscopy (AFM) analysis. The high casting temperature (100 oC) is required for water molecules to evaporate fast enough before being absorbed by the art paper, which results in a better device performance of OTFTs compared to 50 oC.
In many kinds of methods of casting silk fibroin film, the spray process was chosen because the highest performance of OTFTs devices were obtained in our study. The pentacene OTFTs on art paper exhibits very good device performance including a high mobility of 12.2 cm2 V-1 s-1, a threshold voltage of -0.55 V, a subthreshold swing of 365 mV/decade, and on/off ratio about 1x103.

並列關鍵字

Art paper ； OTFT

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