高頻調變紅光發光二極體之研製

The Development of High-Speed Red Light Emitting Diodes

林君萍(Chun-Ping Lin)

指導教授 ： 吳孟奇 ； 何充隆

國立清華大學/電機資訊學院/電子工程研究所/碩士(2012年)

摘要

近年來，不論在磊晶、製程或封裝層面上，發光二極體（LED）產業皆有長足的進展，不僅在發光效率上超越代表綠能門檻的100 lm/W，其與生俱來的小體積、易調變、多色光、長壽命等特點，在在凸顯固態照明為大勢所趨，使民生照明更儼然成為產業必爭之地。
在本論文中，我們設計開發以磷鋁化銦鎵為材料之可高頻調變紅光發光二極體，採用高橫向阻值磊晶層設計與低接觸電阻之氧化鋅系列透明導電膜技術構成自我侷限電流注入結構，促使電流注入密度提升與均化，並設計不同之主動區徑長及焊線墊俓長。我們將探討元件之設計理念，規劃進行元件製程，及不同元件之特性分析。我們將藉由製程及不同元件尺寸的實測，了解操作頻率的限制主因，萃取模型必要參數，在不影響其他參數下，找出最適規格及進行最佳化設計。結果顯示元件尺寸越小，將有越高之頻率響應，其原因是小尺寸元件有相對較高之電流密度注入縮短載子生命期及較小之寄生電容限制頻寬，而能操作於高頻調變。

關鍵字

發光二極體 ； 磷鋁化銦鎵

並列摘要

In recent years, the light emitting diode (LED) industry have considerable development not only in epitaxial process but also in aspect of package. It’s luminous efficiency has already exceed 100 lm/W, which is the threshold of the green energy representative. Their small mass and volume, solid state construction, multi-color, easy modulation, and long-life characteristics make the solid state lighting become a general trend, and bring a competitive market in people's livelihood and lighting.
In our dissertation, we demonstrate a high-speed AlGaInP-based light-emitting diode at wavelength of around 650nm using the wet etching to forming self-confined current injection structure with different diameter of mesa, and the different dimension of bonding pad. And we discusses the design concept, fabrication and performance characteristics of different LEDs device parameters. Our efforts were directed at finding the best compromise between device characteristics and at devising ways to improve modulation behavior without essentially affecting the other parameters. The smaller device dimension will thus lead to the higher 3dB frequency bandwidth. It is attributed to the shorter carrier lifetime at higher current density and smaller RC time constant limited bandwidth.

並列關鍵字

Light emitting diodes ； AlGaInP

參考文獻

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