- 學位論文
吸水性蠶絲蛋白為介電層之靛藍雙載子有機薄膜電晶體評估
Evaluation of silk fibroin as hygroscopic gate dielectric for indigo ambipolar Bio-OTFTs
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摘要
蠶絲蛋白 (silk fibroin) 由蠶繭脫膠後萃取而得，靛藍 (indigo, C16H10N2O2)是常用於衣物染色之天然染料，已有文獻描述具雙載子特性。本實驗以水溶液製程蠶絲蛋白為介電層、熱蒸鍍靛藍薄膜為半導體，製備生物相容有機薄膜電晶體，並評估於不同環境濕度下元件電性表現。靛藍薄膜結晶性可藉由TTC (Tetratetracontane, C44H90) 層間層加入而改善，並使元件表現雙載子特性。真空下，元件p 型及n 型飽和區載子遷移率分別為9 × 10−5與0.05cm2V−1s−1，臨介電壓 (Vth) 分別為-90V 與80V；有高的n 型載子遷移率，但與p 型載子遷移率差異大，且操作偏壓高。於相對濕度20% ~ 50%下量測元件電性，發現在濕度30%下，元件有相近的n 型與p 型載子遷移率約為10−2cm2V−1s−1，臨 介電壓約為±60V，是合適的元件操作濕度。若於濕度50%下量測元件，雖臨介電壓降至約為±30V，但n 型載子遷移率下降至10−3cm2V−1s−1。蠶絲蛋白組成胺基酸包括：絲胺酸 (Serine)、丙胺酸 (Alanine)、甘胺酸 (Glycine)；其中，絲胺酸為極性胺基酸、氮氧原子上孤對電子、蛋白質碳端與氮端皆可能是使蠶絲蛋白具吸水性原因。含水環境下蠶絲蛋白介電層累積載子能力增加，而靛藍半導體則降低傳輸，推測所觀察之電性隨濕度變化為兩因素之抗衡。遲滯曲線量測結果為反向掃描汲極電流大於正向掃描電流，含水環境下遲滯曲線較真空下減少許多。
並列摘要
Silk fibroin is a natural protein extracted from Cocoons of Bombyx mori. Indigo (C16H10N2O2) is a natural dye pigment used extensively on commodities and has been reported to have ambipolar transport characteristics. The objective of this work is to fabricate Bio-organic thin film transistors (Bio-OTFTs) by integrating thermal evaporated indigo thin film and solution-based silk fibroin and to evaluate the performance of ambipolar devices at different relative humidity. The crystal quality of indigo is improved by inserting a TTC (Tetratetracontane, C44H90) interlayer on silk fibroin so that both the p- and n- channel transport appear simultaneously in the indigo ambipolar Bio-OTFT. In vacuum, the operation voltage is up to 100 V and the p- and n- channel field effect mobility (μFE,sat) are respectively ca. 9 × 10−5 and 0.05cm2V−1s−1 in saturation region and the threshold voltages (VTH) are ca. -90 V and 80 V, respectively. In air ambient, the amino acid including Glycine, Serine and Alanine in silk fibroin make silk fibroin a hygroscopic dielectric material. At 30% relative humidity, the indigo ambipolar OTFT exhibits comparable μFE,sat of ca. 10−2cm2V−1s−1 for hole and electron. While the relative humidity increases to ca. 50%, the VTH reduces to ca. ±30 V but with a worse n-channel performance ca. 10−3cm2V−1s−1. Hysteresis shows a higher back scanning current and a larger VTH shift in vacuum than in 55% relative humidity during gate voltage sweep.
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