磁性奈米線抗腐蝕性之研究

Corrosion Resistance Properties in Magnetic Nanowires

柯宜成(Yi-Cheng Ko)

指導教授 ： 衛榮漢

國立清華大學/工學院/動力機械工程學系/碩士(2014年)

摘要

本篇嘗試從鐵磁性材料腐蝕性的特性去研究，當磁性材料受到蝕刻液蝕刻的特性是否會因為其他因素所影響，有別於一般奈米製程的蝕刻特性研究，大多僅限於對磁性材料薄膜進行不同濕蝕刻溶液蝕刻之後，研究其蝕刻速度與其蝕刻後性質，並未針對蝕刻時磁性材料會因為外加磁場而有內部磁化態改變這點因素進行研究，本篇嘗試從鐵磁性材料腐蝕性的特性去研究，在有外加磁場的狀態下對磁性奈米線進行濕式蝕刻，並從蝕刻後磁性奈米線的線寬以及表面粗糙度上，研究其抗蝕刻能力是否會因為不同方向以及不同大小的外加磁場所影響，想要藉由此研究討論磁性奈米線中的磁化態的變化是否會直接或間接影響到磁性奈米材料的抗蝕刻特性。
從結果我們也得知磁性奈米線中的磁化態的變化對於濕蝕刻的速度有顯著的影響，尤其當外加磁場方向為沿著奈米線長軸(易軸)方向時，隨著外加磁場強度的增加原子與原子之間的束縛力越強，因此奈米線的抗蝕刻能力較強。

關鍵字

蝕刻

並列摘要

In this thesis we try to study on corrosion resistance properties .One the other hand, we study on the factors that influence material etching properties. Unlike most nano manufacturing techniques etching researchs, they study on thin film etching rate with different kind of etchant and the material etched properties. In this thesis we fabricate some nanowires on the substrates, and try to study the influence of line width etching rate and roughness when magnetic nanowires etching with a magnetic environment. One the other hand, we try to study the influence between the domain structure change in the nanoscale magnetic material and the magnetic material corrosion resistance properties
Our preliminary result for the magnetic nanowires etching with a magnetic environment shows that the influence between the arrangement of magnetic doman and the etching rate of nanowire width and roughness. On the condition that Nanowire etched with a magnetic field along the easy axis the stronger the magnetic field the slower the etching rate and the smoother on roughness are.

並列關鍵字

Wet etching

參考文獻

1. M. N. Baibich, J. M. Broto, A. Fert, F. N. Vandau, F. Petroff, P. Eitenne, G. Creuzet, and A. Friederich, J. Chazelas, “Giant magnetoresistance of (001)Fe/(001) Cr magnetic superlattices,” Phys. Rev. Lett., vol. 61, pp. 2472-2475, 1988.

2. G. A. Prinz, “Magnetoelectronics,” Science, vol. 283, pp. 330-330, Jan 1999.

4. S. Parkin, X. Jiang, C. Kaiser, A. Panchula, K. Roche, and M. Samant, “Magnetically engineered spintronic sensors and memory,” Proc. IEEE, vol. 91, pp. 661-680, 2003.

5. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, “Large magnetoresistance at room-temperature in ferromagnetic thin-film tunnel-junctions," Phys. Rev. Lett., vol. 74, pp. 3273-3276, 1995.

8. Y. S. Song, Y. H. Byun, and C. W. Chung, “Wet etch characteristics of NiFe and CoFe magnetic thin films,” J. Ind. Eng .Chem, vol. 10, no. 2, pp. 215-219, 2004.