- 學位論文
以High-k材料作為矽晶及HIT太陽電池鈍化層之研究
Surface passivation of c-Si and HIT solar cells with high-k material
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摘要
在現今的太陽電池中，超過85%的太陽電池仍以矽材料為基板，效率的提升受限於載子在矽基板表面的複合，可以透過在表面鍍製一層鈍化層(Passivation layer)來降低載子在表面的複合。 在本篇論文中,使用原子層化學氣相沉積法(Atomic layer chemical deposition,簡稱 ALD)來鍍製High-k 材料薄膜當作鈍化層。首先鍍製不同High-k材料於單晶矽太陽電池，試了不同的鈍化條件：無High-k鈍化層、正面Al2O3、雙面Al2O3及雙面HfO2，實驗結果發現雙面鍍製HfO2可以達到較佳的鈍化效果，轉換效率達到15.542%。接下來將HfO2鍍製於HIT太陽電池表面當作鈍化層，同樣試了不同的鈍化條件：無HfO2鈍化層、IP面HfO2、IN面HfO2、雙面HfO2及不同的HfO2厚度，實驗結果發現鍍製8Å的HfO2在HIT的雙面可以達到最高的轉換效率，使用鈍化層的Cell，Voc為0.61V；Jsc為31.276mA/cm2；FF為0.612；效率提升至11.68%。
並列摘要
Over 85% of the solar cells currently produced are based on crystalline silicon wafers. The efficiency of silicon solar cells is significantly affected by electronic recombination losses at the wafer surfaces. A surface passivation layer can be used to reduce electronic recombination losses. In this study, we used Atomic Layer chemical Deposition (ALD) to deposit high-k material as a passivation layer. At first we deposited different high-k materials on c-Si solar cells. We tried different passivation conditions, such as without high-k passivation, with Al2O3 in the front side, with Al2O3 on both sides, and with HfO2 on both sides. The result showed that cell with HfO2 on both sides achieved the highest efficiency of 15.542%. We also deposited HfO2 on HIT solar cells as surface passivation layer. Different passivation conditions such as without HfO2 passivation, with HfO2 on IP side, with HfO2 on IN side, and with HfO2 on both sides are used. HIT solar cell having passivation with HfO2 (8Å) on both sides achieved the highest efficiency. The highest efficiency obtained for HIT cell with HfO2 passivation was 11.68%, with a Voc of 0.61 V, Jsc of 31.276 mA/cm2 and FF of 0.612.
參考文獻
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