本文利用分子束磊晶法成長硒化錳x鋅1-x/碲y硒1-y化鋅量子井結構,並在低溫下量測光激螢光譜研究其光學特性。觀察到於硒化錳x鋅1-x/碲y硒1-y化鋅量子井結構的量子侷限下,碲原子團束縛激子與多個碲原子束縛激子的躍遷能量隨著碲硒化鋅層(井寬)厚度增加而減少。藉由光激螢光譜判斷硒化錳x鋅1-x/碲y硒1-y化鋅量子井結構的能帶排列為第二形式。最後利用理論計算得到電子和電洞在位能井中的侷限能量及束縛能,證明實驗上所觀測得的碲原子團束縛激子的量子侷限能量及束縛能與理論值相符合。並計算出硒化錳0.03鋅0.97/碲0.08硒0.92化鋅量子井價帶與傳導帶的能帶補償值分別介於300~400毫電子伏特及155~255毫電子伏特。
In this thesis, Zn1-xMnxSe∕ZnSe1-yTey quantum well structures were grown by molecular beam epitaxy. Low temperature photoluminescence was used to study the optical properties. Under the quantum confinement of Zn1-xMnxSe∕ZnSe1-yTey quantum well structure, the transition energies of Te cluster and Ten (n≧2) bound exciton decrease with well width. Type II band alignment of Zn1-xMnxSe∕ZnSe1-yTey quantum well structure is determined. At last, the confinement energies of electron and hole were also calculated. The experimental quantum confinement energies of Te cluster bound exciton can be fitted by theoretical value reasonabbly. The respective valence and conduction band offset of Zn0.97Mn0.03Se∕ZnSe0.92Te0.08 quantum well are determined to be 350±50meV/205±50 meV.