1x4 線性陣列式酸鹼離子感測器之研製

Study and Fabrication on 1x4 Linear Array pH-Sensitive Sensor

蔣境昇(Jing-Sheng Chiang)

指導教授 ： 熊慎幹

中原大學/工學院/電子工程研究所/碩士(2002年)

https://doi.org/10.6840/cycu200200113

摘要

作為一個酸鹼離子感測器，其主要以離子感測場效電晶體(ISFET)與玻璃電極兩種架構為主，基於其架構考量與製作模式，玻璃電極並不適用於製作陣列式酸鹼離子感測器。於本論文中，嘗試以改進於ISFET元件之延伸式離子感測場效電晶體(EGFET)並結合CMOS標準製程製作一「1x4 線性陣列式酸鹼離子感測器」，其中並就感測器本身之相關電路製作與讀出訊號在統計方面之應用作探討，而感測膜材料係採用射頻濺鍍法所沉積之二氧化錫薄膜。最後討論於不同光照強度下，EGFET元件之感測膜變化，且探討其變化成因。

關鍵字

延伸式離子感測場效電晶體 ； CMOS標準製程 ； 陣列式酸鹼離子感測器 ； 二氧化錫薄膜

並列摘要

The traditional glass pH probes and ion sensitive field effect transistor (ISFET) were usually used to be a pH sensor. According to the frame and fabrication way of this two devices, the traditional glass pH probes was not fit to be an array pH sensor. In this thesis, it combined the extended gate ion sensitivity field effect transistor (EGFET), which was improved from ISFET, and the standard CMOS process to make use of a “1x4 linear array pH-sensitive sensor”. The contents were included the manufacture of readout circuit by sensor itself and the application to readout signal by statistics. Besides that, the sensing film, SnO2 was prepared by the R.F. reactive sputtering system. Finally the reaction of sensing film from EGFET was discussed after illuminated different intensity light.

並列關鍵字

EGFET ； the standard CMOS process ； SnO2 ； array pH-sensitive sensor

參考文獻

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