以稀土氧化物為閘極介電質之砷化鎵金氧半場效電晶體的製作與研究

The Fabrication and Study of GaAs MOSFET Using Rare-Earth Oxide as Gate Dielectrics

陳俊嘉(Jiun-Jia Chen)

指導教授 ： 高慧玲

中原大學/工學院/電子工程研究所/碩士(2002年)

https://doi.org/10.6840/cycu200200185

摘要

本實驗主旨在研究以稀土氧化物Ga2O3(Gd2O3)為閘極介電質之n通道空乏式砷化鎵金氧半場效電晶體元件的製作及電性的表現。砷化鎵材料具有高的載子遷移率、低雜訊及半絕緣等優勢，一直是高頻通訊ICs的主流。然而，對於砷化鎵MOSFET元件而言，缺乏可靠的閘氧化層一直是主要的致命傷。近年來，美國貝爾實驗室洪銘輝博士製作出非常適合砷化鎵基板的閘氧化層Ga2O3(Gd2O3)。
本實驗室與美國貝爾實驗室合作製作n通道空乏式砷化鎵金氧半場效電晶體。首先我們分別使用SRIM模擬離子佈植及MEDICI做元件電性的模擬；並研究閘氧化層之濕蝕刻方式。接著分別以氧離子佈植隔離及濕蝕刻隔離法完成元件製作。經量測得到MOSFET的特性：閘極尺寸比越大，汲極電流與傳導值越大；閘氧化層越薄，汲極電流越大，趨勢與MOSFET的理論相符合。

關鍵字

稀土氧化物 ； 金氧半場校電晶體 ； 砷化鎵

並列摘要

The main goal of this thesis is to fabricate GaAs Metal Oxide Semiconductor Field Effect Transistors using rear-earth oxide as gate dielectrics and study the device characteristics. GaAs and related compound material system dominates the applications of modern high frequency communication devices because of their low noise, high electron mobility and the nature of semi-insulating substrates. However, the critical issue of GaAs MOSFET is lack of reliable gate oxide layer. Recently, Dr. M. Hong, etal in Lucent Bell Laboratories have developed the growth of Ga2O3(Gd2O3) on GaAs substrates.
We collaborated with Bell Laboratories to fabricate the n-channel depletion mode GaAs MOSFETs. First, we use SRIM and MEDICI to simulate the ion implantation and the characteristics of devices. And study the wet etching for Ga2O3(Gd2O3) dielectrics. O+ implantation and wet etching isolation were used to fabricate the devices. The I-V characteristic of n-channel depletion mode GaAs MOSFETs are consistent to the theorem trend of MOSFETs.

並列關鍵字

Rear-earth Oxide ； Gallium Arsenic ； MOSFET

參考文獻

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