Photoluminescence (PL) was used to investigate silica mesoporous material. The results found that the red luminescence, origin from non-bridging oxygen hole centers (NBOHCs), can be enhanced by rapid thermal annealing in pure N2 environment. In addition,we found the red luminescence intensity decay with time. The decay behavior may be related to the recombination of H and NBOHCs. We also investigated asymmetric semiconductor microcavities using in-plane and normal PL. The luminescence from quantum well excitons and cavity mode photons was observed. The energy of quantum-well excitons shifts slightly by the influence of cavity mode. In the temperature-dependent quality factor measurement,it was observed the cavity mode interacts with the quantum-well excitons