碲化鎘磊晶層及奈米結構之成長與物性分析

Growth and Characterization of CdTe Epilayers and Nano-Structures

葉展瑋(Zhan-Wei Yeh)

指導教授 ： 周武清

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300079

摘要

摘 要
利用分子束磊晶術成功地在砷化鎵（100）基板上成長碲化鎘磊晶層，其中在基板與碲化鎘間加入硒化鋅和碲化鋅為緩衝層。藉由改變碲化鎘磊晶層二六族元素流量比及硒化鋅和碲化鋅緩衝層厚度，並利用光反射及光激螢光觀察碲化鎘的重、輕電洞的分裂及近能隙的光學躍遷，嘗試決定出最佳磊晶條件。再依據此條件成功地成長出一系列不同覆蓋厚度的碲化鎘奈米結構。利用數值模擬的活化能區分量子井及量子點的變溫光激螢光譜。並利用以上的結果推測碲化鎘量子點的成長模式。
最後利用原子遷移強化磊晶及傳統分子束磊晶術這兩種不同的磊晶方式將量子點與量子井成長在同一基板上，以形成量子點耦合量子井結構。再試著改變量子點與量子井間隔層的厚度，藉由變溫光激螢光求得的活化能變化，分析被量子井捕捉的載子經穿隧效應在量子點的復合中心被侷限而發出螢光的方式。

關鍵字

量子點

並列摘要

Abstract
CdTe epilayers were grown on the GaAs (100) substrates with the ZnSe and ZnTe buffer layers by the molecular beam epitaxy. The optimized growth condition, which was achieved by adjusting the II/VI group element flux ratio and the thickness of the ZnSe and ZnTe buffer layer, was determined by the investigation of heavy and light hole splitting and the near band edge transition of the reflectance and photoluminescence spectra. The CdTe nano-structures of various coverage thickness were grown according to the above growth condition. The numerical simulation of activation energy was used to differentiate the temperature dependent photoluminescence spectra of the quantum well and quantum dot structures. The growth mode of CdTe quantum dot was then concluded.
Finally, the migration enhanced epitaxy and the traditional molecular beam epitaxy were used to grow the quantum dots and the quantum well on a single GaAs substrate to form a coupled quantum dots and quantum well structure. By the temperature dependent photoluminescence spectra, the effect of the thickness of the isolation layer between the quantum dots and the quantum well on the activation energy was obtained. It was used to analyze the luminescence mechanism of the confined electrons and holes tunneled from the quantum well to the quantum dot recombination center.

並列關鍵字

quantum dot

參考文獻

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參考文獻

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