碲化鋅半導體量子點之光學特性研究

Optical properties of ZnTe semiconductor quantum dots

許嘉緯(Chia-Wei Hsu)

指導教授 ： 沈志霖

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300462

摘要

本文使用光激螢光、時間鑑別光激螢光與無接點電場調制反射光譜研究type-II ZnTe/ZnSe量子點的光學特性。當激發光功率增加時，發現量子點的光激螢光能量峰值有藍位移，這可以用type-II能帶彎曲的模型來解釋。相反地，濕層的能量峰值隨激發光功率增加卻有紅位移現象，這個現象則由位能不均勻產生的侷域化現象來了解。此外，從溫度變化的光激螢光量測與溫度變化的時間鑑別光激螢光量測，可明顯觀察到載子由濕層轉移至量子點的現象。

關鍵字

量子點 ； 碲化鋅

並列摘要

Optical properties of type-II ZnTe/ZnSe quantum dots have been investigated by using photoluminescence (PL), time-resolved PL, and contactless electro-reflectance (CER). As the excitation power is increased, a blue (red) shift of PL peak is found in quantum dots (wetting layers). These results are explained by a band-bending model (localization due to potenial fluctuation). In addition, a carrier-transfer phenomenon from wetting layer to quantum dots is observed in the temperature-dependent and time-resolved PL measurements.

並列關鍵字

ZnTe ； quantum dots ； ZnTe/ZnSe

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