矽離子注入ONO 記憶體之可靠度與
持久度研究

中文摘要近年來，隨著可攜式產品，如筆記型電腦、數位相機、手機等的普及，非揮發性記憶體在半導體記憶元件的發展與研究上，其所扮演的角色是愈來愈重要。隨著半導體製程技術逐年的進步，非揮發性記憶體，從最早的唯讀記憶體(Read-Only-Memory，ROM)、可程式唯讀記憶體(Programmable-Read-Only-Memory，PROM)，到可抹除程式化唯讀記憶體(Erasable- Programmable-Read-Only-Memory)、電性可抹除程化唯讀記憶體(Electrically Erasable Programmable Read Only Memory ， EEPROM)，以至目前最熱門的快閃記憶體(Flash Memory)，都可看見半導體製程技術在非揮發性記憶體上的運用亦逐年在進步。近年來又以一新型結構:矽-氧化矽-氮化矽-氧化矽-矽 (Silicon-Oxide-Nitride-Oxide-Silicon，SONOS)記憶體元件較為熱門，主要是其在製程上與標準CMOS 製程有著相當高的匹配性，而且 SONOS 記憶體元件可利用通道熱載子機制寫入使元件可以做二位元的存取，如此可以大大地降低生產成本。本篇論文以SONOS 記憶元件為研究主題，且利用矽離子佈植於 SONOS 記憶元件來提昇其寫入與抹除的效率，於實驗上首先就SONOS 記億元件的操作與讀取方式做說明，並利用TSUPREM4 及MEDICI 分別去模擬SONOS 記憶體元件的結構及基本電性，最後實驗方面，利用未做矽離子佈植的元件為對照組做比較，從實驗結果可發現經過矽離子佈植的SONOS 記憶體有著較佳的寫入/抹除效率、較快的寫入/ 抹除時間和較大的寫入/抹除邏輯位差，但於可靠度與持久度的比較分析實驗中，卻也發現SONOS 記憶元件經過矽離子佈植後，會損壞其穿隧氧化層，使元件的可靠度下降。在論文的最後，提出了些解決的幾種方向，以期日後能找出最適當的方法解決上述的問題。

關鍵字

可靠度；快閃記憶體；持久度

並列摘要

Abstract Non-Volatile Memory (NVM) has been developed and improved in past years, and recently it has been received much attention in mobile or portable applications, such as mobile phones, smart cards and digital camera. First, the history of the Non-Volatile Memory (NVM) and the concept of the NVM are introduced. And the typical NVMs, such as EPROM, EEPROM, flash memory are also introduced. Nowadays, Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) becomes the most popular memory device because of its high compatibility with existing CMOS logic processes and simplicity in device structures, the SONOS devices become more and more attractive. Due to the SONOS devices can be programmed by channel hot electron injection mechanism with supplying low voltage for two-bit storage per cell, it can easily achieve cost reduction simply by doubling the bit counts in the same area. In this thesis, Si-implanted SONOS cell is proposed to improve the program/erase efficiency of the SONOS cell. Then TSUPREM4 and MEDICI are used to simulate the structure and basic electrical characteristics. A SONOS cell without Si-implanted is prepared to compare the Si-implanted one. Both of experiment and simulation show that the Si-implanted SONOS cell has the better program/erase efficiency and broader program/erase window. However, its reliability issues are concerned. Although Si-implanted in the nitride layer is a potential way to increase the trap density, it also degrades the oxide-nitride-oxide reliability using the existing implantation processes. Thus, efforts will be needed for the improvements in SONOS retention and its reliability.

並列關鍵字

edurance ； reliability ； Flash memory

參考文獻

[1-1] Samsung Electronics Co. LTD ,“Flash Technology”, , pp.4, 2002

[1-2] Paolo Cappelletti, Carla Golla, Piero Olivo and Enrico Zanoni,

[1-4] Samsung Electronics Co. LTD, “Flash Technology”, pp.37, 2002

electrically-alterable, non-destructive read-only storage device”,

Presented at the Int. Electron Device Meeting, Washinton, DC,

國際替代計量

矽離子注入ONO 記憶體之可靠度與持久度研究

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