CF4 / C2H2電漿披覆於非對稱聚碸膜對滲透蒸發之影響

Deposition of CF4 / C2H2 plasma on asymmetric polysulfone membrane and its effect on pervaporation

方珮珊(Pei-Shan Fang)

指導教授 ： 賴君義

中原大學/工學院/化學工程研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300732

摘要

為了改善以濕式法製備之PSf薄膜，應用於滲透蒸發程序之分離效能。本研究中以CF4/C2H2電漿於多孔性PSf基材膜表面，改善薄膜之表面之親水性，以增加滲透蒸發分離醇水溶液之分離效能。
本研究利用CF4/C2H2電漿沉積於PSf非對稱性薄膜上，應用於滲透蒸發（pervaporation）分離乙醇水溶液。控制CF4/C2H2電漿沉積時間於PSf基材膜表面之時間，改質後之PSf複合膜引用ATR-FTIR、SEM、ESCA、AFM和Contact angle等表面分析評估改質成果，探討不同電漿沉積時間與不同進氣流量對膜材結構之影響，並進一步探討複合膜之滲透蒸發效應。研究發現，經CF4/C2H2電漿沉積後，膜材表面經ATR-FTIR及ESCA分析皆有一均勻且緻密C-F層。而當電漿沉積時間增加時，薄膜表面經SEM分析發現，隨沉積時間增加，表面沉積層厚度增加，但當沉積時間過長時，膜材表面則因內應力增大而出現沉積層微龜裂效應，導致應用於滲透蒸發時，透過量隨電漿沉積時間增加而先降低後增加、選擇比則呈現相反趨勢。於25℃操作溫度下，以CF4/C2H2電漿沉積15min之PSf複合膜，引用滲透蒸發分離90wt﹪乙醇水溶液時，其透過量為358g/m2hr、選擇比為92。其分離效能較未改質之PSf薄膜佳（透過量1500、選擇比20）。

關鍵字

聚碸 ； 電漿 ； 滲透蒸發

並列摘要

In this study, the CF4/C2H2 plasma deposition onto asymmetric polysulfone (PSf) membrane to improve the pervaporation performance separation of ethanol / water mixture was investigated. The effects of plasma treatment time and CF4/C2H2 gas flow ratio on the pervaporation performances were also discussed. In addition, the surface properties of the PSf composite membrane were characterized by using ATR-FTIR, SEM, ESCA, Contact angle and AFM. The thickness of the deposition dense layer increased and the surface roughness increased with the plasma treatment time increased. However, the micro-crack of the deposition layer, resulting in the separation performance decreases as plasma treatment time higher than 15 mins. The optimum plasma treatment condition was obtained as that 50W supply power, 15 mins. treatment time and CF4/C2H2 gas flow ratio 20/10（sccm）, giving a separation factor of 92 and a permeation rate of 358 g/m2h for pervaporation of 90wt% ethanol / water mixture at 25℃.The pervaporation performance of the modified PSf membrane is higher than that of the unmodified PSf membrane （permeation rate of 1500 g/m2h、separation factor of 20）

並列關鍵字

pervaporation ； plasma ； polysulfone

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