砷化銦鎵(InGaAs)薄膜成長在 磷化銦(InP)基板上的特性研究

Characterzation of InGaAs Thin Films grown on InP substrate

白育叡(Ui-Ra Bai)

指導教授 ： 朱惠美

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200400067

摘要

砷化銦鎵（InGaAs）磊晶層被運用在許多的光電元件上，如光電二極體及長波長雷射…等等，本次實驗是討論利用有機金屬化學氣相磊晶( MOCVD )法成長砷化銦鎵（InGaAs）在磷化銦( InP )基板上，並對樣品進行量測與分析，以了解不同成長條件對磊晶結構與磊晶層特性的影響。
有機金屬化學氣相磊晶( MOCVD )法是目前成長半導體化合物材料中製程較為簡易的方法，樣品成長是利用有機金屬三甲基銦( TMI )、三乙基鎵( TMG )及氫化砷( AsH3 )作為磊晶成長砷化銦鎵（InGaAs）的氣體源，氫氣作為載流氣體，成長溫度由570℃到650℃，延遲時間由11秒到14秒。
實驗中所利用的量測儀器有X–射線雙晶繞射儀及光激螢光光譜儀，可用來了解基板與磊晶層間的晶格匹配程度，並分析磊晶層的成分及光學特性。

關鍵字

砷化銦鎵 ； 磷化銦

並列摘要

Epitaxial layers of InGaAs are the basic material for several types of optoelectronic device, avalanche photodiodes and long wavelengh laser. In this study it reports the optical properties of InGaAs/InP epilayer grown by Metalorganic Chemical Vapor Deposition (MOCVD) growth method under some different grown conditions.

As to know the MOCVD growth method is now a convenient technique for growing the semiconductor compounded material. All of the sample were grown using trimethylindium (TMI), trimethylindium (TMG), and arsine (AsH3) as sources of In, Ga, As, respectively, and phosphine (PH3), which in vertical atmospherical pressure. Hydrogen or a mixture of nitrogen and hydrogen was used as a carrier gas. And the experimental results shown that the growth temperature was varied from 570 to 650℃, while the delay time varied from 11 sec. to 14 sec..

X-ray Double-Crystal diffraction (DCD) technique can be used to measure the lattice mismatch between the epitaxial layers and the substrate, which in turn can also be used to calculate the composition of the epitaxial layer. And the photoluminescence (PL) measurement can be used to analysis the optical property of the sample.

並列關鍵字

MOCVD ； InP ； InGaAs

參考文獻

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[8] M.Razeghi,M.A.Posson“Low Pressure MetalorgaNic Chemical Vapor Deposition Of InP and Related Compound”

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