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  • 學位論文

半導體製程之缺陷分析與改善

Analysis of wafer defects and improvement in semiconductor processing

指導教授 : 溫武義
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摘要


積體電路製程中,晶圓缺陷一直是有礙於產品良率提昇的一項重要因素。在積體電路尺寸日益縮減的同時,晶圓缺陷對良率的影響更值得重視。晶圓製程中諸如微影、蝕刻、薄膜沉積、擴散、化學機械研磨等步驟皆會產生晶圓缺陷;除此之外,來自環境的懸浮物,如:微塵、溶劑、氣體分子等也是晶圓缺陷的來源[1]。如何有效減少晶圓缺陷的產生,以及提升晶圓缺陷來源分析效率,乃各晶圓廠不斷努力的目標。 本篇文章探討如何藉由實驗之設計,分析晶圓製程中所發現的圓形缺陷之來源。結果顯示此圓形缺陷由無塵室環境中的懸浮物所造成,該汙染源係彩色噴墨印表機運作時所產生的墨水分子飄落至晶圓上所致。

並列摘要


In integrated circuit processing, the issue of wafer defects is very important for elevating the product yield. Wafer defects show an even stronger impact on the product yield as the circuit dimension shrinks. In semiconductor processing, the steps such as photolithography, etching, thin film deposition, diffusion, and chemical mechanical polishing will introduce defects; otherwise, the suspended matters in the environment, such as: dust, solvents, gas molecules are the sources of wafer defects. How to reduce the number of wafer defects and increase the analysis efficiency of the origin of wafer defects is the goal that each wafer fab is constantly striving for. This article reports on how to identify the origin of the circular defects found in IC wafer processing through an experimental investigation. Based on the analysis of data obtained, the source of the wafer defects is suggested to be the suspended particles in the clean-room environment, originated from the ink molecules of color inkjet printer during its operation.

參考文獻


[1] 謝瑞豪、彭羽榛(無日期)。無塵室空氣品質監測分析技術開發與應用實例。經濟部工業局工業安全衛生技術輔導網,民99年7月17日,取自。
[3] 林聰鎰、呂宗行,壓電噴墨頭流體動態行為之模擬研究,碩士論文,國立成功大學航太工程學系,2007。
[4] 曾俊欽、王覺寬,推拉式壓電噴嘴之製作及噴霧特性,碩士論文,國立成功大學航太工程學系,2007。
[8] Hiroshi Nagaishi, and Munetoshi Fukui, and Hisao Asakura, and Aritoshi Sugimoto , "Defect Reduction in Cu Dual Damascene Process Using Short-Loop Test structures," IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No 3, 2003
參考文獻

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