目前最具有發展潛力的太陽能電Cu(In,Ga)Se2(CIGS)太陽能電池,其中最重要的硒化製程並未有一標準化製程,而硒化過程關係著電池效率,目前最傳統的硒化製程是應用H2Se 或硒蒸氣,但H2Se 有著高毒性,就製程的安全與環境,會付出更大的成本,相對的應用硒蒸氣之硒化卻有著大面積均勻性不佳問題,主因為硒蒸氣的活性較低且所含之硒分子分子量較大。 本文針對工研院發展之線形電漿流場進行修改討論,以改善流場對電漿之影響。最後透過線型電漿處理硒蒸氣,探討硒蒸氣在經歷電漿處理與未經電漿處理後,於基材上之沉積表現,並加入掃描方式處理CIG 薄膜。了解電漿內部物種、薄膜特性及電漿參數間之關係,進而建立Se 薄膜之成膜機制。由實驗量測之結果,經由電漿處理沉積後,硒膜伴隨著功率增大而趨於緻密,可以得知電漿對於硒蒸氣有一定程度的影響,而透過此方式可以解離硒蒸氣使其成為小分子硒並且提高活性。
Cu(In,Ga)Se2 (CIGS) thin film solar cells have received significant attention in recent years, because of the highly conversion efficiencies and low-cost. However, selenization of metallic precursors is one of the most important issue in the process. Selenium is a key point for the growth of CIGS thin films. Traditional selenium source used in the selenization process, including H2Se and selenium vapor. H2Se has high toxicity and selenium vapor commonly leads to large molecular such as Sen (2 ≦n≦8) with low activity. In this study,we simulated the flow field of line plasma source that made by ITRI and improved the flow impact on plasma. Finally, the characteristics of Se-films deposited on silicon substrate and CIG thin films were investigated. Experimental results show that the Se-film become dense with plasma power. It means the selenium molecular were cracked by plasma and enhanced the activity.