- 學位論文
氧化鋅壓電薄膜物性分析及其換能器應用研究
The growth of ZnO thin films and the application study of the piezoelectric transducers
摘要
本論文利用射頻磁控濺鍍法在室溫下沉積氧化鋅薄膜於可撓式ITO/PET基板上，藉由改變氧氣比例沉積高品質的氧化鋅壓電薄膜。經由X -ray繞射儀和場發射掃描式電子顯微鏡分析得知，在工作壓力15 mTorr、濺鍍功率90 W、氧氣比例(氧氣流量比總氣體流量)為5 %時，可獲得晶粒緻密和具有高c軸從優取向的氧化鋅薄膜。利用FESEM換算出鍍率後即可沉積固定薄膜厚度7μm的樣品，再由原本基板的ITO為下電極，銅箔膠帶為上電極製作壓電元件，並且比較不同氧氣比例之氧化鋅薄膜的壓電效應。 製作完成後的元件面積約10cm2，利用垂直施壓壓電量測系統進行壓電量測，結果發現當進氣壓力為6kg/cm2時，氧氣比例5%的條件下可得到最大開路電壓約0.52V，其壓電產值隨著ZnO(002)繞射峰值高低而變化。
並列摘要
In this thesis, the zinc oxide (ZnO) films were deposited on ITO/PET substrate at room temperature by a magnetron reactive sputtering system. The effects of oxygen ratio on the structure of ZnO films were studied. X-ray diffraction (XRD) and Field-Emission Scanning electron microscopy (FE-SEM) were employed to characterize the crystallinity and film growth rate. All ZnO films exhibit columnar structure and preferred orientated with c-axis perpendicular to substrates. The optimal deposition parameters for ZnO films are sputtering pressure of 15mTorr, RF power of 90 W and oxygen concentration of 5 %. The optimized ZnO films were obtained to fabricate piezoelectric transducers. The vertical-pressure testing equipment was employed to measure the open-circuit voltage of the piezoelectric devices. Using the piezoelectric transducer with ZnO film thickness of 7μm, the device area was 10 cm2, the maximum open-circuit piezoelectric voltage of 0.52V can be obtained with the applied pressure of 6kg/cm2. The results can bring about the development of the piezoelectric transducers using ZnO films for low frequency vibration energy.