單邊非重疊離子佈植記憶元件介面特性與資料保存能力提升之研究

Study of Interface State and Improve the Data Retention in Single-sided Non-overlapped Implantation nMOSFETs

陳昭甫(Chao-Fu Chen)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2013年)

https://doi.org/10.6840/cycu201300968

摘要

在半導體產業中，非揮發性記憶體的應用愈來與廣泛，其市場亦愈來愈多元，對於半導體記憶元件開發來說，元件的可靠度問題與改善扮演著極為重要的角色。因此在本論中，以單邊非重疊離子植入式記憶元件之介面特性與可靠度作為研究主題，此元件係利用熱載子效應進行電荷的注入，並以側壁區作為資料儲存區域。針對熱載子效應造成元件介面缺陷的變化，探討影響元件可靠度的因素，透過高溫回火之電荷再注入的方式來恢復元件的介面狀態，並提升其電荷保存能力與改善元件之可靠度特性。藉由電荷幫浦技術(charge pumping technique)的量測，觀察元件介面缺陷對於電荷流失狀況，最後根據Arrhenius law所建立之電荷流失模型進行活化能(activation energy, Ea)之推算，並進行分析與驗證。

關鍵字

非揮發性記憶體 ； 可靠度 ； 電荷幫浦

並列摘要

In the semiconductor industry, non-volatile memory (NVM) applications are becoming extensive in various markets. For semiconductor devices development, the improvement of reliability characteristics plays an important role. In this work, we explore the interface state issues and reliability characteristics in single-sided Non-overlapped Implantation (SNOI) MOSFETs in NVM applications. To recover the interface state, the high temperature annealing between operations is used to improve data retention in SNOI devices. Based on the charge pumping measurements, the interface states are correlated to the charge loss. Finally, charge loss mechanisms are characterized using the activation energy (Ea) in Arrhenius equation for better understanding the data retention characteristics of the SNOI devices.

並列關鍵字

Non-volatile memory (NVM) ； reliability ； charge pumping

參考文獻

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