氧化鋅奈米線應用於微應變感測上之初步探討

本研究目的為量測氧化鋅奈米線的壓阻性質並探討此特性於微應變感測上之應用，實驗方式係透過自行研發的一套可在掃描式電子顯微鏡真空腔內部執行奈米操作之平台，此平台具有在立體空間中進行奈米組裝加工及量測的功能，利用此平台將氧化鋅奈米線配合鎢針逐一進行奈米線結構組裝於矽基材上形成一元件，再將此元件使用遮罩系統以濺鍍方式使電極層覆蓋至奈米線兩端，形成金屬氧化物半導體的奈米級應變感測元件，當感測元件受微力變形後，透過掃描式電子顯微鏡影像量測奈米線應變，同步以奈米操作平台測量其壓阻性質之變化，探討氧化鋅奈米線受微力時在串並聯狀態下之壓阻性質的變化。實驗結果顯示單根氧化鋅奈米線之應變從0 % ~ 8.9 %時，其應變系數為3.21；串聯兩根氧化鋅奈米線之應變從0 % ~ 8.4 %時，其應變系數為3.73；串聯三根氧化鋅奈米線之應變從0 % ~ 9.6 %時，其應變系數為4.07；並聯雙根奈米線之應變從0 % ~ 9 %時，其應變系數為3.06；並聯三根奈米線之應變從0 % ~ 9.1 %時，其應變系數為3.01；此應變感測元件可量測到之應變解析度可達0.1 %。由於串聯二根奈米線下之應變係數比單根奈米線約成長了16.2%，串聯三根奈米線下比單根的應變係數成長了26.8 %，顯示以串聯的方式可使應變係數趨近於正成長，目前此應變感測元件在串聯的結果下應變係數最大值為4.07，是一般商用應變感測器(2.04)的2倍，未來可利用此串聯氧化鋅奈米線的壓阻特性，製作奈米級的微應變感測器。

關鍵字

氧化鋅奈米線；奈米操控系統；壓阻性質；微應變

並列摘要

The purpose of this research is to measure the piezo-resistive property of ZnO nanowires and discuss the possibility of applying this property to the mesaurement of micro-strain.　A nano-manipulator was developed to perform the nano-manipulation of ZnO nanowires on Si wafers inside the vacuum chamber of the scanning electron microscope. Once a nanowire was placed on the substrate, the two ends of the nanowire were sputtered with Au as the measurement electrodes. When the substrate was deformed with the operation of the nano-manipulator, the nanowire was synchronously deformed along with the substrate. The variances of piezo-resistivity for several sets of series and parallel connections of ZnO nanowires under different normal strains were measured. The strain of nanowires was calculated from images of the scanning electron microscope, and the corresponding piezo-resistivity was simultaneously measured with a Wheatstone bridge. Experimental results show that the gauge factor for three nanowires in series connection was 4.07, which is roughly twice of the commercial strain gauge. This shows that the idea of using ZnO nanowires in series connection to develop a micro-strain sensor is possible.

並列關鍵字

ZnO nanowire ； nano-manipulator ； piezo-resistive property ； micro-strain

參考文獻

[1] 陳秀連, “以化學法製備均一粒徑氧化鋅粉體與發光特性之研究＂,國立台灣科技大學材料科技研究所, (2002)

the properties of ZnO films prepared by RF magnetron sputtering＂, J.Eur.Cera. Soc. Vol. 23,pp.1593-1598,2003

[3] 水瑞鐏, “氧化鋅薄膜特性及其在通訊元件與液體感測器上之應用＂, 國立成功大學電機工程學系博士論文, (2002)

[4] P. Nunes, D.Costa, E. Fortunato and R. Martins, “Performances presented by zinc oxide thin films deposited by RF magnetron sputtering＂, Vacuum ,vol. 64, pp.293-297,2002

[5] O. Milosevic, and D. Uskokovic, “Synthesis of BaTiO3 and ZnO varistor precursor powders by reaction spray pyrolysis＂, Mater. Sci. and Eng., A128, 249-252 (1993).

國際替代計量

氧化鋅奈米線應用於微應變感測上之初步探討

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