以雷射消融法成長氧化石墨烯奈米薄片及量子點

Synthesis of Graphene Oxide Nanoflakes and Quantum Dots by Laser Ablation

池庚樺(Ken-Hua Chih)

指導教授 ： 沈志霖

中原大學/理學院/奈米科技碩士學位學程/碩士(2015年)

https://doi.org/10.6840/CYCU.2015.00211

摘要

在本論文中成功的利用雷射消融一步合成出多種形狀的氧化石墨烯奈米結構，並透過掃瞄式電子顯微鏡與穿透式電子顯微鏡來檢測其結構。
透過吸收光譜、拉曼散射光譜及X射線光電子能量譜的實驗結果發現氧化石墨烯原始溶液經雷射消融改質後會導致其含氧相關官能基減少而有光致還原現象。
光激螢光的螢光強度會隨著雷射消融處理時間而逐漸增強，根據此實驗結果推測螢光強度與含氧官能基的濃度減少有關，本論文也藉由時間解析光激螢光光譜研究氧化石墨烯量子點的複合機制，發現光激螢光是由於侷域化之載子複合於具有鋸齒型邊界氧化石墨烯量子點。

關鍵字

量子點 ； 雷射消融 ； 氧化石墨烯

並列摘要

In this study, graphene oxide nanoflakes and graphene oxide quantum dots were prepared using pulsed laser ablation method. Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM) were used for structural analysis. In addition, the chemical structure of graphene oxide after pulsed laser ablation was studied using Ultraviolet-Vis Absorption, Raman spectroscopy and X-ray photoelectron spectra. Graphene oxide nanoflakes with different shapes were observed for the irradiation time of 10-20 mins. Photo-reduction occurs during irradiation with pulsed laser. Optical properties of the graphene oxide quantum dots were investigated using photoluminescence and time-resolved photoluminescence. An excitation-dependence of photoluminescence in graphene quantum dots was observed . We suggest that photoluminescence of graphene quantum dots originates from the recombination of the localized carriers from the zigzag-edge states.

並列關鍵字

Quantum dot ； Laser ablation ； Graphene oxide

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