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  • 學位論文

三接面太陽能電池之內建電場探討

Investigation of the built-in electric field in triple-junction solar cells

指導教授 : 沈志霖

摘要


本文第一部份利用電調制反射光譜(electroreflectance)來測得磷化銦鎵/砷化銦鎵/鍺三接面太陽電池之內建電場(built-in electric field)。在外加光偏壓(波長808 nm雷射)下,量測上層磷化銦鎵子電池及底層鍺子電池之內建電場隨雷射功率的變化;光偏壓改用波長532 nm雷射時,得出第二層砷化銦鎵子電池內建電場隨雷射功率的變化。接著利用SPICE(Simulation Program with Integrated Circuit Emphasis)軟體模擬三接面太陽電池等效電路,討論在雙二極體模型(Two Diode Model)下並合理解釋了各個子電池在光偏壓下的內建電場變化。   第二部份,討論從三接面太陽電池照射雷射下的電流-電壓特性曲線中出現階梯式的現象(kink effect),並藉由SPICE模擬驗證kink現象產生及消失原因,並從中了解電流不匹配(current mismatch) 在三接面太陽電池中對電流-電壓特性曲線的影響。

並列摘要


In the first part, we use electroreflectance modulation spectroscopy to measure the built-in electric field of the In0.51Ga0.49P / In0.01Ga0.99As/Ge triple-junction solar cells. Under the illumination of a laser with wavelength of 808 nm, the dependence of the built-in electric fields of the top subcell and the bottom subcell on laser power was studied. Also, under the illumination of a laser with wavelength of 532 nm, the dependence of the built-in electric field of the middle subcell on laser power was studied. The equivalent circuit of the triple junction solar cells was simulated by using SPICE (Simulation Program with Integrated Circuit Emphasis) program and the two diode model, the built-in electric field under light bias can be explained well. In the second part, the kink effect of the I-V curve in triple-junction solar cells under illumination of a laser was investigated. By the simulated results of SPICE program we find that the current mismatching in the triple-junction solar cell is responsible for the kink effect measured in the I-V curve.

參考文獻


[3] R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey,H. Yoon, R. A. Sherif, and N. H. Karam, Appl. Phys. Lett. 90, 183516 (2007).
[8]Solid State Electronic Device , 6th, Chapter 4 , Ben G. Streetman and Sanjay Kumar Banerjee
[11]B. O. Seraphin and N. Bottka, Phys. Rev, 145, 628 (1966).
[12]D. E. Aspnes,Phys. Rev B,10,4228 (1974)
[16]Y. S. Chen, K. S. Wu, D. P. Wang, K. F. Huang and T. C. Huang, Appl.

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