- 學位論文
以低溫回火鈍化矽太陽能電池缺陷之研究
Study on Passivation of Silicon Solar Cell Defects by Low-temperature Annealing
摘要
摘要 就目前矽太陽能電池發展而言，如何降低內部缺陷提升轉換效率成為各個研究團隊一項重要的課題。本實驗中在P型單晶基板上製作太陽能電池，係採用採用傳統式的石英爐擴散過程(CFP)製作射極層、網版印刷和快速高溫製程(RTP)方式在溫度816℃ ~ 824℃時間15秒製作電池背電極和鋁背部電場(Al-BSF)、前電極部分則省略黃光製成步驟以金屬遮罩混和電子槍蒸鍍Ti/Pd/Ag、抗反射層則是利用電漿增強化學氣相沉積(PECVD)成長SiNx薄膜約900nm。其中從二次離子質譜儀發現，以780℃磷擴散40分鐘可得到N型摻雜濃度約1021cm-3、深度約250nm。接著將製作完成的太陽能電池進行低溫回火處理，鈍化太陽能電池表面的懸浮鍵。從太陽光模擬系統和I-V量測中發現電池的轉換效率以及在暗電流方面有顯著的提升，經過逐漸的縮小溫度的範圍以及增加回火的時間，最後成功的以390℃回火6分鐘提升了2.14％的轉換效率。
並列摘要
Abstract For present silicon solar cells, how to reduce defects and promote conversion efficiency became one of important challenge for every research team. In this experiment, using several technologies fabricate silicon solar cell in p-type Czochralski silicon (Cz-Si) substrate, which included conventional quartz tube furnace processing (CFP) for the emitter layer, screen printing and rapid thermal processing (RTP) at 816℃ ~ 824℃ for 15 second format rear contact and aluminum back surface field (Al-BSF), saves photolithography step we used mixed metal mask and E-gun evaporate front contact Ti/Pd/Ag, antireflective coating (ARC) growth SiNx film by PECVD about 900nm. From secondary ion mass spectrometry (SIMS) analysis reveals that phosphorus-doped has concentration about 1021 cm-3 and junction depth 250nm. Then using low temperature annealing method passivate cells surface dangling bonds in formation solar cells. In one-sun simulations and I-V detector are presented conversion efficiency and dark current has promoted obviously, pass through reduces the temperature and lengthens annealing time, we successful promoted 2.14% conversion efficiency at 390℃ for 6 minutes.