以電漿輔助化學氣相沉積系統製備 低溫氮化矽薄膜阻障層在塑膠基材之研究

Study of Silicon Nitride Barrier Layer by Plasma Enhanced Chemical Vapor Deposition on Flexible Substrate

陳許峻(HSU-CHUN CHEN)

指導教授 ： 魏大欽

中原大學/工學院/化學工程學系/碩士(2008年)

https://doi.org/10.6840/cycu200900576

摘要

以塑膠基板製備之可撓式顯示器被視為下一世代最佳之平面顯示器。
然而其對於水氣及氧氣的阻絕能力較差，而影響軟性電子元件的使用穩定
性與壽命長短，如何使塑膠基材具有高效率阻水氣滲透能力是重要的研究
課題。
本研究以聚亞醯胺為基材，在低溫下利用電漿沉積輔助化學氣相沈積
系統（PECVD)來沈積具有高均勻性與良好基板附著性之無機氮化矽薄膜，
作為氣體阻障層，並施以不同氣體進行表面電漿處理方式，增加膜材的緻
密度，改善成膜品質，以有效降低水氣透過率（Water Vapor Transmission
Rate, WVTR）。最後，以氮化矽/聚亞醯胺複合膠膜，在20 °C、相對溼度60%
測試條件之下，藉由鈣測試法量測膜材之水氣透過率（WVTR）。實驗結
果發現，在NH3 / SiH4 =3.33 的流量配比下，氮化矽/聚亞醯胺複合膜已擁有
一定的阻氣特性，水氣透過率為0.096 g/㎡/day。將此複合薄膜利用300W N2
氣體進行表面電漿處理後，從FTIR圖譜分析得知，氮化矽薄膜的含氫量有
減少及降低氮化矽膜材的氧化速率之現象，這代表薄膜在電漿表面處理後
更能抵抗水氣侵入，水氣透過率也呈現WVTR可由原本的0.096 g/m2/day 進
而降低至0.025 g/m2/day。

關鍵字

電漿 ； 氮化矽

並列摘要

Flat display on plastic substrate could be lightweight, thin and flexible.
However, the intrinsic high gas and water vapor permeation reduces the devices
lifetime and reliability. The improvement in moisture resistance characteristics
of plastic substrate should be resolved for further applications.
In this study, We used Plasma Enhanced Chemical Vapor Deposition
System（PECVD）to grow barrier thin film（SiNx）of high uniformity at low
temperature（64℃）. Furthermore, the barrier property of SiNx thin films was
improved by plasma surface treatment. From the WVTR result, it was found that
the SiNx film deposited with feed ratio NH3 / SiH4 = 3.33 has the best moisture
resistance of 0.096 g/m2/day at 20℃and 60 %RH. And from the analysis of
FTIR spectrum, the amounts of Si-H and Si-O bonds in SiNx thin film could be
reduced after plasma surface treatment. It indicates that the densification of
SiNx thin film can be improved by plasma treatment. The WVTR was decreased
from 0.096 g/m2/day to 0.025 g/m2/day when SiNx film was further treated in N2
plasma.

並列關鍵字

PECVD ； SiNx

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