- 學位論文
溶膠凝膠法製備鈮摻雜於二氧化鈦之透明導電薄膜特性研究
The Study of Transparent and Conductive Properties of Nb-doped TiO2 Thin Film Prepared by Sol-Gel Method
摘要
完整化學配比，及膜層結構與塊材緻密性相當的金屬氧化物，二氧化鈦(TiO2)薄膜，在室溫的一般環境下，對可見光是透明的絕緣體。本研究透過摻雜別種金屬氧化物，期望能調變二氧化鈦(TiO2)薄膜的電學性質，增加導電性，但同時保持可見光的透明性。二氧化鈦(TiO2)薄膜的鈦離子是+4價，所摻雜金屬氧化物的金屬離子，若是比鈦離子多一價，即有機會改變透明二氧化鈦薄膜的電性。本研究選擇摻雜，金屬離子鈮(Nb+5)為+5價的五氧化二鈮(Nb2O5)氧化物。 薄膜成長的方法是:以溶膠凝膠(Sol Gel)法，於矽(Si)、藍寶石(Al2O3)及氧化銦錫(ITO)三種基板上，鍍製二氧化鈦(TiO2) ，摻雜莫爾百分比3% 及5% 五氧化二鈮(Nb2O5)的混合透明氧化膜，並在攝氏溫度600oC及一般大氣氣壓環境下，進行薄膜樣品的退火，分析薄膜的晶體結構，比較摻雜不同莫爾百分比五氧化二鈮(Nb2O5)的二氧化鈦(TiO2)薄膜之間，光學性質與電學性質的差異。 溶膠凝膠法，相較於其他亦可鍍製透明氧化膜的方法，如:“化學氣相沉積法(CVD)”、“電子束蒸鍍法”和“磁控濺鍍法”等，它可在室溫及大氣氣壓條件下操作，不像上述三種方法，需在低真空或高真空環境下，才可進行，大幅降低製程成本。
並列摘要
The titanium dioxide (TiO2) thin film, a metal oxide with complete stoichiometry and its structure compactness of thin film equivalent to the compactness of TiO2 bulk material, is a transparent insulator for visible light in general environment of room temperature. In this research, TiO2 thin film by doping with other metal oxide, it is expected that its electrical properties can be adjusted and conductivity can be increased in keeping its visible light transparency. The titanium ion of titanium dioxide (TiO2) film is a positive tetravalent ion. If the metal ion of metal oxide doped into TiO2 film is more positive monovalent than titanium ion, then having a possibility to change the electrical properties of the transparent titanium dioxide film. In this study, we select the niobium pentoxide (Nb2O5) with positive pentavalent niobium (Nb+5) ion doped into TiO2 thin film. The method of thin film growth is: Sol Gel method, deposited titanium dioxide (TiO2) on three substrates of silicon (Si), sapphire (Al2O3) and indium tin oxide (ITO), doped with mole percentage 3 % and 5% niobium pentoxide (Nb2O5), to form transparent mixture oxide films and anneal the film samples at 600oC in general atmospheric pressure, then analyze the crystal structure of the films, compare the optical and electrical properties of titanium dioxide (TiO2) films doped with different mole percentages of niobium pentoxide (Nb2O5). The sol-gel method compares with the other methods of coating thin film, such as: "chemical vapor deposition (CVD)", "electron beam evaporation" and "magnetron sputtering", etc. It can be operated at room temperature and atmospheric pressure. Unlike the above three methods, which need to be carried out in a low or high vacuum environment. So the Sol-Gel Method greatly reduces the cost of the thin film deposition process.
參考文獻
延伸閱讀
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