探討在不同基板與環境下高溫退火氧化銦鎵鋅薄膜特性

The Characterization of IGZO thin film with a high temperature annealing under different substrate and environment

李政宜(Cheng-yi Lee)

指導教授 ： 陳至信

中原大學/電機資訊學院/電子工程研究所/碩士(2015年)

https://doi.org/10.6840/cycu201500621

摘要

現今科技對薄膜電晶體的要求相當高，需有高載子遷移率、高開關電流比、良好的均勻性以及低溫製程等。而傳統的Si材料無法同時滿足以上條件。近年來出現了許多替代材料，其中以氧化鋅摻雜三價元素銦、鎵之氧化銦鎵鋅(IGZO)材料最被看好。IGZO在可見光範圍具有高穿透率且在室溫下成長為非晶結構，無晶粒邊界問題，適合大面積生產。元件特性方面可藉由改變銦、鎵之間的比例改變其電性。
本論文採用溶膠凝膠法以及射頻磁控濺鍍系統二種製程方式，將IGZO薄膜成長在Si(100)、Sapphire以及Glass基板上並以高溫熱退火處理，藉由XRD量測發現在高於600°C薄膜時會開始產生晶相。由Hall量測得知：在氮氣環境下的高溫熱退火，會改善IGZO薄膜的電性；氧氣環境下則不理想。而成長在Sapphire及Glass上的樣品皆有良好的可見光穿透率。

關鍵字

氧化銦鎵鋅 ； 退火

並列摘要

Today, as far as the specifications of thin film transistors, the need of high carrier mobility, high on/off current ratio, good uniformity and low process temperature are concerned. However, the amorphous silicon and poly-silicon, still can’t meet these criteria of the thin film transistors.

In recent years, there have been many alternative materials, such as zinc oxide doped with indium and gallium (IGZO) material. The IGZO thin films of high transmittance in the visible range and at room temperature for growth of the amorphous structure have no grain boundary problem for mass production. In addition, the electrical property of IGZO can be controlled by the doping of Indium and Gallium.

In this study, IGZO film were grown on si(100),sapphire(0001) and glass substrate at room temperature by RF magnetron sputter and Sol-gel process. Annealing at high temperature was then followed. The crystal structure of IGZO film was characterized by XRD measurements. The structure of IGZO film become poly-type at 600°C. From Hall measurement results, we found the samples annealed with high temperature in N2 gas environment would be with better electrical properties. The electrical properties of samples annealed in O2 gas environment would be not good. The transmittance of IGZO films on sapphire and glass substrates are good at visible light range.

並列關鍵字

IGZO ； annealing

參考文獻

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