以常壓式化學氣相沉積法成長In2Se3/Si之特性研究

Study of heteroepitaxial growth of In2Se3 on Si substrates by atmospheric-pressure halide chemical vapor deposition

謝志傑(CHIH-CHIEH HSIEH)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2007年)

https://doi.org/10.6840/cycu200700277

摘要

以常壓式化學氣相沉積法成長
In2Se3/Si之特性研究
摘要
太陽能電池演變至今已細分為以矽元素為主、多元化合物以及有機化合物等幾個方向(見圖Ⅰ)，其中以矽為主的太陽能電池可分為晶矽和非晶矽薄膜兩大類，晶矽又細分成單晶矽、多晶矽和多晶矽薄膜；多元化合物亦可再分做單晶和多晶，單晶的多元化合物像是砷化鎵(GaAs)、磷化銦(InP)等等，而多晶的多元化合物則有硫化鎘 (CdS)、CIGS (CuInGaSe2)。總而言之，不論何種材料的太陽能電池，其各自有各自發展的領域空間，沒有任何一種可以囊括全部。
此篇論文為針對CIGS (CuInGaSe2)薄膜太陽能電池其中可當緩衝層材料之ㄧ的硒化銦(In2Se3)做研究，所有樣品皆使用常壓式有機金屬化學氣相沉積系統成長於矽基板之上，所成長出硒化銦皆以γ面為主。本論文一共做了四大項的實驗分析，分別是一、針對不同的成長溫度做探討，二、針對不同的ⅢⅥ族元素流量比做探討，三、針對成長於(111)和(100)的矽基板作探討，四、針對是否使用氮化鋁作緩衝層的探討。最終目的是期望能對於硒化銦這材料有更近一步的了解以利運用及減小CIGS太陽能電池之漏電流。

關鍵字

太陽能電池 ； 硒化銦

並列摘要

Study of heteroepitaxial growth of In2Se3 on Si substrates by atmospheric-pressure halide chemical vapor deposition
Abstract
Up to now solar cells can be classified into many type according to the materials used, such as silicon, compound semiconductors and organic compounds…etc. (see FigureⅠ). Among these types of solar cells, silicon solar cells can be classed with Crystalline and Amorphous thin film; Crystalline is included single crystalline, poly crystalline and thin film poly. Furthermore, compound also can be classed with single and poly crystalline. Single crystalline compound for example like GaAS, InP…etc. poly crystalline for example like CdS, CIGS (CuInGaSe2) …etc. In the word, there would be developed area whatever any materials of solar cells, and no one could include all.
This paper investigated for one of buffer layers In2Se3 which is included of CIGS (CuInGaSe2) thin film Solar cells. All simples were deposited on Si substrates by homemade vertical atmospheric pressure metal-organic Chemical Vapor Deposition (MOCVD) system. The In2Se3 thin films were almost γ-phase. The paper research four parts of experiments: First is In2Se3 films grown with different temperatures. Second is In2Se3 films grown with different Ⅲ-Ⅵ ratio. Third is In2Se3 films grown with different Si substrates. And fourth is In2Se3 films grown with AlN buffer layer. The finally purpose is much understand for In2Se3 to be useful and decreased leakage of electric current of CIGS solar cell.

並列關鍵字

In2Se3 ； solar cell

參考文獻

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