- 學位論文
利用反應性DC/RF共濺鍍法製備可見光化光觸媒薄膜
Preparation of Visible Light Active Photocatalyst AgIn5S8-ZnS Thin Film by Reactive DC/RF co-Sputtering
摘要
本研究利用反應性DC/RF磁控共濺鍍法，在氬氣與反應性氣體硫化氫的環境下共濺鍍銀銦鋅靶，沈積AgIn5S8-ZnS之可見光光觸媒薄膜於載玻片、ITO玻璃之基材上。沈積結果分別由PL-螢光光譜儀、SEM、XRD、恆電位儀等對於沈積之薄膜進行表面結構、物性、功能性的測試，經由結果分析各沈積參數與薄膜性質之關係，以歸納出最佳的製程操作參數。藉著濺鍍功率DC/RF＝50/50、基板溫度300℃和H2S氣體流率Φ＝0.4之最佳操作參數，可以製備出Eg （Energy band gap）為1.96 eV的光觸媒薄膜，薄膜之結構由XRD可以得知為AgIn5S8、ZnS之混合結晶相。並且在施加1伏特之偏壓，300W之氙燈照射下，可以產生最大光電流為12.96 mA/cm2，而在不施加偏壓之情況下，當波長為420nm時，可以得到最高之光量子效率3.7％。歸納以上結果可以得知，利用反應性共濺鍍法可以製備出高品質、大面積和均勻性佳之薄膜，非常適合於光觸媒薄膜製備之應用。
並列摘要
The visible-active photocatalyst thin film of AgIn5S8-ZnS was deposited on glass and ITO glass by DC/RF magnetron reactive co-sputtering. PL-fluorescence spectrum, SEM, XRD, Scanning potentiostat were used to analyze the properties and capability of the photocatalyst thin film after deposition. The optimum parameter of deposition was sputtering power DC/RF=50/50, substrate temperature 300℃, and H2S gas ratio Φ=0.4. The energy band-gap of the thin film is 1.96 eV, and the crystal structure include AgIn5S8 and ZnS obvious by XRD. The maximum photocurrent 12.96mA/cm2 of the photocatalyst thin film, it was illuminated by the 300W Xe lamp, and exert 1V bias. In addition, as the illuminate wavelength is 420nm, and without exert any bias, there is a maximum quantum efficiency about 3.7%. Therefore, reactive co-sputtering is a proper way to preparing the high quality, large area and well uniformity of photocatalyst thin films.