利用電化學方法觀察一價銅對於銅沉積之影響

The Study of the Cuprous Copper on Copper Deposition by Electrochemical Techniques

陳育群(Yu-Chun Chen)

指導教授 ： 鄭俊麟

中原大學/工學院/化學工程研究所/碩士(2007年)

https://doi.org/10.6840/cycu200700754

摘要

本研究中，以硫酸與硫酸銅作為標準溶液，利用電化學分析方法，如:循環伏安法，剝除面積及極化曲線量測，觀察一價銅對銅沉積之影響。
研究結果顯示，固定硫酸銅濃度改變硫酸濃度，轉速增加，一價銅離子的形成有助於抑制銅沉積。隨著硫酸濃度增大，銅的沉積因一價銅的影響越來越明顯。當固定硫酸濃度改變硫酸銅濃度時，其結果亦是相同。
其次，我們也觀察添加抑制劑對一價銅離子之影響。在電位改變初期，一價銅離子會受到抑制劑之影響，產生極化現象，達到抑制的效果。添加30 ppm PPG 2000及添加50 ppm PPG 4000會產生良好的抑制效果。

關鍵字

歧化反應 ； 二價銅離子 ； 電鍍銅 ； 極化曲線 ； 化學添加劑 ； 循環伏安法 ； 一價銅離子

並列摘要

Copper electroplating is now widely used due to its low cost and efficiency in filling narrow geometries. A main challenge in copper electroplating is the control of metal growth from the nano-scale (feature filling) up to the macro-scale (uniformity across the wafer). To achieve efficient filling of narrow geometries, highly conductive electrolytes combined with adequate chemical additives have proven to be efficient. However, the mechanism of copper filling still can not be elucidated in Cu electroplating. The cuprous ion is played an important role in copper electroplating, but the mechanism is still not understood.
In this research, we use linear sweep voltammetry, cyclic voltammetry, cyclic voltammetry stripping, and polarization measurement to study the role of cuprous ion copper electroplating. According to our results, the cuprous ion near the copper electrode would affect the polarization and the electroplating rate. The chemical additives would inhibit the presence of cuprous ions during the electroplating.

並列關鍵字

cuprous ； additives ； cyclic voltammetry ； copper ； cupric ； electroplating ； polarization

參考文獻

[1] International Technology Roadmap for Semiconductor, SIA, (2006).

Fundamentals and Application, John Wiley ＆ Sons, New York,

239, (2000).

[6] J. J. Kelly and A. C. West, J. Electrochem. Soc., 145, 3472, (1998).

[7] J. J. Kelly and A. C. West, J. Electrochem. Soc., 145, 3477, (1998).